GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design

	GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design
	Suyuan Wang ; Qiang Wu ; Jun Zheng ; Bin Zhang ; Jianghong Yao ; Qingjun Zhou ; Li Yang ; Jingjun Xu ; Buwen Cheng
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2020
卷号	59 期号:3 页码:034001
公开日期	2020
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30501]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Suyuan Wang ; Qiang Wu ; Jun Zheng ; Bin Zhang ; Jianghong Yao ; Qingjun Zhou ; Li Yang ; Jingjun Xu ; Buwen Cheng. GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2020,59(3):034001.
APA	Suyuan Wang ; Qiang Wu ; Jun Zheng ; Bin Zhang ; Jianghong Yao ; Qingjun Zhou ; Li Yang ; Jingjun Xu ; Buwen Cheng.(2020).GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design.JAPANESE JOURNAL OF APPLIED PHYSICS,59(3),034001.
MLA	Suyuan Wang ; Qiang Wu ; Jun Zheng ; Bin Zhang ; Jianghong Yao ; Qingjun Zhou ; Li Yang ; Jingjun Xu ; Buwen Cheng."GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design".JAPANESE JOURNAL OF APPLIED PHYSICS 59.3(2020):034001.