Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission

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	Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission
	Kangkai Tian; Chunshuang Chu; Jiamang Che; Hua Shao; Jianquan Kou; Yonghui Zhang; Xingye Zhou; Zhihong Feng; Tongbo Wei ; Zi-Hui Zhang
刊名	Journal of Applied Physics
	2019
卷号	126 页码:245702
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29816]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Kangkai Tian; Chunshuang Chu; Jiamang Che; Hua Shao; Jianquan Kou; Yonghui Zhang; Xingye Zhou; Zhihong Feng; Tongbo Wei ; Zi-Hui Zhang. Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission[J]. Journal of Applied Physics,2019,126:245702.
APA	Kangkai Tian; Chunshuang Chu; Jiamang Che; Hua Shao; Jianquan Kou; Yonghui Zhang; Xingye Zhou; Zhihong Feng; Tongbo Wei ; Zi-Hui Zhang.(2019).Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission.Journal of Applied Physics,126,245702.
MLA	Kangkai Tian; Chunshuang Chu; Jiamang Che; Hua Shao; Jianquan Kou; Yonghui Zhang; Xingye Zhou; Zhihong Feng; Tongbo Wei ; Zi-Hui Zhang."Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission".Journal of Applied Physics 126(2019):245702.