First principles study of Schottky barriers at Ga2O3(100)/metal interfaces | |
Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao | |
刊名 | RSC ADVANCES |
2020 | |
卷号 | 10期号:25页码:14746-14752 |
公开日期 | 2020 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/30394] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao. First principles study of Schottky barriers at Ga2O3(100)/metal interfaces[J]. RSC ADVANCES,2020,10(25):14746-14752. |
APA | Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao.(2020).First principles study of Schottky barriers at Ga2O3(100)/metal interfaces.RSC ADVANCES,10(25),14746-14752. |
MLA | Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao."First principles study of Schottky barriers at Ga2O3(100)/metal interfaces".RSC ADVANCES 10.25(2020):14746-14752. |
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