Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in quadruple-layer XSbO2 (X = Li, Na)†

	Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in quadruple-layer XSbO2 (X = Li, Na)†
	Guan, Shan; Zhang, GuangBiao; Liu, Chang
刊名	NANOSCALE
	2021
卷号	13 期号:45 页码:19172-19180
公开日期	2021
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30803]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Guan, Shan; Zhang, GuangBiao; Liu, Chang. Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in quadruple-layer XSbO2 (X = Li, Na)†[J]. NANOSCALE,2021,13(45):19172-19180.
APA	Guan, Shan; Zhang, GuangBiao; Liu, Chang.(2021).Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in quadruple-layer XSbO2 (X = Li, Na)†.NANOSCALE,13(45),19172-19180.
MLA	Guan, Shan; Zhang, GuangBiao; Liu, Chang."Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in quadruple-layer XSbO2 (X = Li, Na)†".NANOSCALE 13.45(2021):19172-19180.