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	Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures
	Xie, Shihong;   Dey, Anubhab;   Yan, Wenjing;   Kudrynskyi, Zakhar R.;   Balakrishnan, Nilanthy;   Makarovsky, Oleg;   Kovalyuk, Zakhar D.;   Castanon, Eli G.;   Kolosov, Oleg;   Wang, Kaiyou;   Patane, Amalia
刊名	2D MATERIALS
	2021
卷号	8期号:4页码:45020
公开日期	2021
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30809]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Xie, Shihong; Dey, Anubhab; Yan, Wenjing; Kudrynskyi, Zakhar R.; Balakrishnan, Nilanthy; Makarovsky, Oleg; Kovalyuk, Zakhar D.; Castanon, Eli G.; Kolosov, Oleg; Wang, Kaiyou; Patane, Amalia. Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures[J]. 2D MATERIALS,2021,8(4):45020.
APA	Xie, Shihong; Dey, Anubhab; Yan, Wenjing; Kudrynskyi, Zakhar R.; Balakrishnan, Nilanthy; Makarovsky, Oleg; Kovalyuk, Zakhar D.; Castanon, Eli G.; Kolosov, Oleg; Wang, Kaiyou; Patane, Amalia.(2021).Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.2D MATERIALS,8(4),45020.
MLA	Xie, Shihong; Dey, Anubhab; Yan, Wenjing; Kudrynskyi, Zakhar R.; Balakrishnan, Nilanthy; Makarovsky, Oleg; Kovalyuk, Zakhar D.; Castanon, Eli G.; Kolosov, Oleg; Wang, Kaiyou; Patane, Amalia."Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures".2D MATERIALS 8.4(2021):45020.

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