Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response

doi:10.1016/j.ceramint.2021.10.069

CORC > 金属研究所 > 中国科学院金属研究所

	Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response
	Chen, Jianjin 1; Shen, Longhai 1; Qi, Dongli 1; Wu, Lijun 1; Li, Xiang 1; Song, Jianyu 1; Zhang, Xinglai 2
刊名	CERAMICS INTERNATIONAL
	2022-01-15
卷号	48 期号:2 页码:2802-2810
关键词	Al1 xInxN films Magnetron sputtering Tunable bandgap Photodetectors
ISSN号	0272-8842
DOI	10.1016/j.ceramint.2021.10.069
通讯作者	Shen, Longhai(shenlonghai@sylu.edu.cn) ; Zhang, Xinglai(zhangxl@imr.ac.cn)
英文摘要	Al1-xInxN films allow the bandgap to be adjusted in a wide range, which is fascinating for optoelectronic applications, especially in ultraviolet-visible and wavelength-selective photodetection. Herein, the single-phase Al1-xInxN films with tunable bandgap are synthesized via a well-designed radio-frequency (RF) magnetron sputtering method. By means of placing an In sheet on the Al target, we can control the Al and In composition in Al1-xInxN films via only changing the RF power on the target. With increasing the RF power from 100 to 300 W, the In composition (x value) in Al1-xInxN films can be adjusted from 0.94 to 0.34. Accordingly, the bandgaps are adjusted from 2.20 to 2.95 eV. Importantly, the photoresponse wavelengths of Al1-xInxN films are broadened from UV to visible light with raising the x value. The photoresponsivity of the Al1-xInxN film photodetectors is 0.0124 mA/W (x = 0.34), 0.118 mA/W (x = 0.52), and 0.126 mA/W (x = 0.67) under 365 nm, 532 nm, and 650 nm illumination, respectively. The corresponding response times are as fast as 2.37 s, 1.98 s, and 1.39 s, respectively. Our synthesis strategy of Al1-xInxN films proposed in this work will open exciting opportunities for semiconductor bandgap adjustment and wavelength-selective detection of optoelectronic devices.
资助项目	Opening Foundation of Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education[2017004] ; Basical Research Program of Educational Commission of Liaoning province[LG 201910] ; Basical Research Program of Educational Commission of Liaoning province[LG 201716] ; Natural Science Foundation Guidance Plan Project of Liaoning[2019-ZD-0254] ; Natural Science Foundation of Liaoning Province[2019-MS-333]
WOS研究方向	Materials Science
语种	英语
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000724669200002
资助机构	Opening Foundation of Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education ; Basical Research Program of Educational Commission of Liaoning province ; Natural Science Foundation Guidance Plan Project of Liaoning ; Natural Science Foundation of Liaoning Province
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/167555]
专题	金属研究所_中国科学院金属研究所
通讯作者	Shen, Longhai; Zhang, Xinglai
作者单位	1.Shenyang Ligong Univ, Sch Sci, Shenyang 110159, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Chen, Jianjin,Shen, Longhai,Qi, Dongli,et al. Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response[J]. CERAMICS INTERNATIONAL,2022,48(2):2802-2810.
APA	Chen, Jianjin.,Shen, Longhai.,Qi, Dongli.,Wu, Lijun.,Li, Xiang.,...&Zhang, Xinglai.(2022).Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response.CERAMICS INTERNATIONAL,48(2),2802-2810.
MLA	Chen, Jianjin,et al."Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response".CERAMICS INTERNATIONAL 48.2(2022):2802-2810.