Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid

doi:10.1016/j.microrel.2019.06.043

	Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid
	Gao, J.1; Zhang, Q.2; Li, B.1; Xi, K.1; Li, B.1; Liu, F.1; Wang, C.1; Liu, H.1; Zhao, F.1; Zeng, C.1
刊名	MICROELECTRONICS RELIABILITY
	2019-09-01
卷号	100 页码:5
ISSN号	0026-2714
DOI	10.1016/j.microrel.2019.06.043
通讯作者	Zhang, Q.(zhangqingxiang@cast.cn) ; Li, B.(libinhong@ime.ac.cn)
英文摘要	Impact of metal lid in the circuit package was usually neglected during the evaluation, which could probably underestimate the circuit sensitivity to single event upset due to nuclear reaction in metal lid. In this paper, the effect of gold lid on a 0.13 mu m SOI SRAM circuit was studied by both using accelerator test and Geant4 software simulation. The simulation and experiment results show that the contribution of the gold foil to the SEU effect of low energy protons or C+ ions was not obvious. When the energy of protons or C+ ions increased to 200 MeV, the SEU enhancement effect of gold foil on the circuit could not be ignored.
资助项目	National Key Research and Development Program of China[2016YFB0901801] ; National Natural Science Foundation of China[11675013] ; National Natural Science Foundation of China[61704188] ; National Natural Science Foundation of China[61874135]
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000503907900156
资助机构	National Key Research and Development Program of China ; National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/141390]
专题	中国科学院近代物理研究所
通讯作者	Zhang, Q.; Li, B.
作者单位	1.Chinese Acad Sci, Inst Microelect, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China 2.China Acad Space Technol, Beijing Inst Spacecraft Syst Engn, Beijing 100094, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 5.China Inst Atom Energy, Natl Innovat Ctr Radiat Applicat, Beijing 102413, Peoples R China
推荐引用方式 GB/T 7714	Gao, J.,Zhang, Q.,Li, B.,et al. Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid[J]. MICROELECTRONICS RELIABILITY,2019,100:5.
APA	Gao, J..,Zhang, Q..,Li, B..,Xi, K..,Li, B..,...&Guo, G..(2019).Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid.MICROELECTRONICS RELIABILITY,100,5.
MLA	Gao, J.,et al."Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid".MICROELECTRONICS RELIABILITY 100(2019):5.