Lattice disorder and N elemental segregation in ion implanted GaN epilayer

doi:10.1016/j.apsusc.2019.143911

	Lattice disorder and N elemental segregation in ion implanted GaN epilayer
	Li, B. S.1,2; Liu, H. P.2; Xu, L. J.2; Wang, J.3; Song, J.3; Peng, D. P.3; Li, J. H.3; Zhao, F. Q.3; Kang, L.2; Zhang, T. M.2
刊名	APPLIED SURFACE SCIENCE
	2020
卷号	499 页码:9
关键词	He implantation Lattice disorder GaN Transmission electron microscopy Dislocation loops
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2019.143911
通讯作者	Li, B. S.(libingshengmvp@163.com)
英文摘要	The lattice disorder and elemental distribution in He-implanted GaN epilayer at a fluence of 4 x 10(16) He+/cm(2) at 450 degrees C have been investigated by a combination of conventional, high resolution transmission electron microscopy and electron energy loss spectroscopy. High resolution transmission electron microscopy shows interstitial-type dislocation loops attached to He bubbles. The nature of dislocation loops and stacking faults are carefully investigated by high resolution transmission electron microscopy. Electron energy loss spectroscopy shows the deficit of N atoms and enriched Ga nanocrystals formed in the damage region, which is comparable with the previous reports. In addition, the chemical environment of nitrogen upon He+ implantation is first investigated in the present experimental results. The research results will be used for understanding ion irradiation-induced damage in GaN.
资助项目	National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[U1832133] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx7141]
WOS关键词	HE-IMPLANTATION ; INDUCED VOIDS ; HYDROGEN ; DEFECTS ; HELIUM ; IRRADIATION ; SILICON ; LAYER ; EVOLUTION ; FILMS
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER
WOS记录号	WOS:000502588700032
资助机构	National Natural Science Foundation of China ; Doctor Research Foundation of Southwest University of Science and Technology
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/141283]
专题	中国科学院近代物理研究所
通讯作者	Li, B. S.
作者单位	1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Southwest Univ Sci & Technol, Sch Natl Def Sci & Technol, Mianyang 621010, Sichuan, Peoples R China
推荐引用方式 GB/T 7714	Li, B. S.,Liu, H. P.,Xu, L. J.,et al. Lattice disorder and N elemental segregation in ion implanted GaN epilayer[J]. APPLIED SURFACE SCIENCE,2020,499:9.
APA	Li, B. S..,Liu, H. P..,Xu, L. J..,Wang, J..,Song, J..,...&Xiong, An L..(2020).Lattice disorder and N elemental segregation in ion implanted GaN epilayer.APPLIED SURFACE SCIENCE,499,9.
MLA	Li, B. S.,et al."Lattice disorder and N elemental segregation in ion implanted GaN epilayer".APPLIED SURFACE SCIENCE 499(2020):9.