Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist

doi:10.1021/acs.nanolett.0c04304

	Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist
	Liu, Qing 1; Zhao, Jing 2,3; Guo, Jinlong 2,3; Wu, Ruqun 2,3; Liu, Wenjing 2,3; Chen, Yiqin 1; Du, Guanghua 2,3; Duan, Huigao 1
刊名	NANO LETTERS
	2021-03-24
卷号	21 期号:6 页码:2390-2396
关键词	Nanolithography Heavy Ions Single-digit Nanometer Atomic-scale Fabrication Inorganic Resist
ISSN号	1530-6984
DOI	10.1021/acs.nanolett.0c04304
通讯作者	Du, Guanghua(gh_du@impcas.ac.cn) ; Duan, Huigao(duanhg@hnu.edu.cn)
英文摘要	In this work, we demonstrate a process having the capability to realize single-digit nanometer lithography using single heavy ions. By adopting 2.15 GeV Kr-86(26+) ions as the exposure source and hydrogen silsesquioxane (HSQ) as a negative-tone inorganic resist, ultrahigh-aspect-ratio nanofilaments with sub-5 nm feature size, following the trajectory of single heavy ions, were reliably obtained. Control experiments and simulation analysis indicate that the high-resolution capabilities of both HSQ resist and the heavy ions contribute the sub-5 nm fabrication result. Our work on the one hand provides a robust evidence that single heavy ions have the potential for single-digit nanometer lithography and on the other hand proves the capability of inorganic resists for reliable sub-5 nm patterning. Along with the further development of heavy-ion technology, their ultimate patterning resolution is supposed to be more accessible for device prototyping and resist evaluation at the single-digit nanometer scale.
资助项目	National Natural Science Foundation of China (NSFC)[U1632271] ; National Natural Science Foundation of China (NSFC)[51722503] ; National Natural Science Foundation of China (NSFC)[U1930114] ; National Natural Science Foundation of China (NSFC)[11975283] ; National Natural Science Foundation of China (NSFC)[51805160]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000634766600007
资助机构	National Natural Science Foundation of China (NSFC)
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/137662]
专题	中国科学院近代物理研究所
通讯作者	Du, Guanghua; Duan, Huigao
作者单位	1.Hunan Univ, Coll Mech & Vehicle Engn, State Key Lab Adv Design & Mfg Vehicle Body, Natl Engn Res Ctr High Efficiency Grinding, Changsha 410082, Hunan, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Liu, Qing,Zhao, Jing,Guo, Jinlong,et al. Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist[J]. NANO LETTERS,2021,21(6):2390-2396.
APA	Liu, Qing.,Zhao, Jing.,Guo, Jinlong.,Wu, Ruqun.,Liu, Wenjing.,...&Duan, Huigao.(2021).Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist.NANO LETTERS,21(6),2390-2396.
MLA	Liu, Qing,et al."Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist".NANO LETTERS 21.6(2021):2390-2396.