Colossal angular magnetoresistance in the antiferromagnetic semiconductor EuTe2
Yang, Huali5,6; Liu, Qing4,5,6,9; Liao, Zhaoliang7; Si, Liang5; Jiang, Peiheng5; Liu, Xiaolei1; Guo, Yanfeng1; Yin, Junjie10; Wang, Meng3,10; Sheng, Zhigao2,11
刊名PHYSICAL REVIEW B
2021-12-14
卷号104
ISSN号2469-9950
DOI10.1103/PhysRevB.104.214419
通讯作者Zhong, Zhicheng(zhong@nimte.ac.cn)
英文摘要With a surge of interest in antiferromagnetic (AFM) spintronics, the manipulation and detection of different AFM states has become a topic of concern. In particular, a large magnetoresistive response is of critical importance for facilitating the readout of AFM states. Here, we report the observation of colossal angular magnetoresistance (AMR) in a layered AFM rare-earth dichalcogenide, EuTe2. The AMR reaches -40 000% at 2 K and 22 kOe, which is approximately four orders of magnitude larger than in AFM metals and alloys. Combined magnetization, resistivity, and theoretical analysis reveal strong coupling of the electronic state (metal vs insulator) to the vector spins, which mainly arises from the space-time inversion symmetry-broken correlated band reconstruction. Consequently, the anisotropic magnetization response to the vector magnetic field induces metal-insulator transition (MIT) and a large anisotropic magnetotransport that explains the experimental findings very well. These results suggest an avenue for exploring the spin configuration dependent transport properties for unique AFM spintronic devices.
资助项目National Key R&D Program of China[2019YFA0705700] ; National Key R&D Program of China[2016YFA0201102] ; National Key R&D Program of China[2017YFA0303602] ; National Nature Science Foundation of China[11904414] ; National Nature Science Foundation of China[51525103] ; National Nature Science Foundation of China[51931011] ; National Nature Science Foundation of China[11774360] ; National Nature Science Foundation of China[51701231] ; National Nature Science Foundation of China[11904373] ; National Nature Science Foundation of China[11874264] ; Key Research Program of Frontier Sciences, Chinese Academy of Sciences[ZDBS-LY-SLH008] ; Nature Science Foundation of China[11974325] ; Natural Science Foundation of Guangdong[2018A030313055]
WOS关键词ELECTRONIC-STRUCTURE CALCULATIONS ; TOTAL-ENERGY CALCULATIONS ; ANISOTROPIC MAGNETORESISTANCE ; MEMORY
WOS研究方向Materials Science ; Physics
语种英语
出版者AMER PHYSICAL SOC
WOS记录号WOS:000753770800003
资助机构National Key R&D Program of China ; National Nature Science Foundation of China ; Key Research Program of Frontier Sciences, Chinese Academy of Sciences ; Nature Science Foundation of China ; Natural Science Foundation of Guangdong
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/127612]  
专题中国科学院合肥物质科学研究院
通讯作者Zhong, Zhicheng
作者单位1.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
2.Chinese Acad Sci, High Field Magnet Lab, Anhui Key Lab Condensed Matter Phys Extreme Cond, Hefei 230031, Peoples R China
3.Sun Yat Sen Univ, Sch Phys, Guangzhou 510275, Peoples R China
4.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
5.Chinese Acad Sci, CAS Key Lab Magnet Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
6.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Peoples R China
7.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Peoples R China
8.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
9.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
10.Sun Yat Sen Univ, Sch Phys, Guangzhou 510275, Peoples R China
推荐引用方式
GB/T 7714
Yang, Huali,Liu, Qing,Liao, Zhaoliang,et al. Colossal angular magnetoresistance in the antiferromagnetic semiconductor EuTe2[J]. PHYSICAL REVIEW B,2021,104.
APA Yang, Huali.,Liu, Qing.,Liao, Zhaoliang.,Si, Liang.,Jiang, Peiheng.,...&Li, Run-Wei.(2021).Colossal angular magnetoresistance in the antiferromagnetic semiconductor EuTe2.PHYSICAL REVIEW B,104.
MLA Yang, Huali,et al."Colossal angular magnetoresistance in the antiferromagnetic semiconductor EuTe2".PHYSICAL REVIEW B 104(2021).
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