Effect of stacking order on the electronic state of 1T-TaS2

doi:10.1103/PhysRevB.105.035109

	Effect of stacking order on the electronic state of 1T-TaS2
	Wu, Zongxiu 1; Bu, Kunliang 1; Zhang, Wenhao 1; Fei, Ying 1; Zheng, Yuan 1; Gao, Jingjing 2,6; Luo, Xuan 2; Liu, Zheng 5; Sun, Yu-Ping 2,3,4; Yin, Yi 1,3
刊名	PHYSICAL REVIEW B
	2022-01-06
卷号	105
ISSN号	2469-9950
DOI	10.1103/PhysRevB.105.035109
通讯作者	Yin, Yi(yiyin@zju.edu.cn)
英文摘要	New theoretical proposals and experimental findings on transition metal dichalcogenide 1T-TaS2 have revived interest in its possible Mott insulating state. We perform a comprehensive scanning tunneling microscopy and spectroscopy experiment on different single-step areas in pristine 1T-TaS2. After accurately determining the relative displacement of the Star of David superlattices in two layers, we find that different stacking orders can correspond to a similar large-gap spectrum on the upper terrace. When the measurement is performed away from the step edge, the large-gap spectrum can always be maintained. The stacking order seems to rarely disturb the large-gap spectrum in the ideal bulk material. We conclude that the large insulating gap is from the single-layer property, which is a correlation-induced Mott gap based on the single-band Hubbard model. Specific stacking orders can perturb the state and induce a small-gap or metallic spectrum for a limited area around the step edge, which we attribute to a surface and edge phenomenon. Our work provides more evidence about the stacking-order effect on the electronic state and deepens our understanding of the Mott insulating state in 1T-TaS2.
资助项目	National Key Research and Development Program of China[2016YFA0300404] ; National Key Research and Development Program of China[2019YFA0308602] ; Key Research and Development Program of Zhejiang Province, China[2021C01002] ; Fundamental Research Funds for the Central Universities in China ; National Natural Science Foundation of China[NSFC-11674326] ; National Natural Science Foundation of China[NSFC-11874357] ; National Natural Science Foundation of China[NSFC-11774196] ; Tsinghua University Initiative Scientific Research Program ; Joint Funds of the National Natural Science Foundation of China ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1832141] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1932217] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U2032215]
WOS关键词	PHASE-TRANSITIONS ; INSULATOR ; LOCALIZATION ; PURE
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000742485400002
资助机构	National Key Research and Development Program of China ; Key Research and Development Program of Zhejiang Province, China ; Fundamental Research Funds for the Central Universities in China ; National Natural Science Foundation of China ; Tsinghua University Initiative Scientific Research Program ; Joint Funds of the National Natural Science Foundation of China ; Chinese Academy of Sciences' Large-Scale Scientific Facility
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/127113]
专题	中国科学院合肥物质科学研究院
通讯作者	Yin, Yi
作者单位	1.Zhejiang Univ, Dept Phys, Zhejiang Prov Key Lab Quantum Technol & Devices, Hangzhou 310027, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 3.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 4.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 5.Tsinghua Univ, Inst Adv Study, Beijing 100084, Peoples R China 6.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China
推荐引用方式 GB/T 7714	Wu, Zongxiu,Bu, Kunliang,Zhang, Wenhao,et al. Effect of stacking order on the electronic state of 1T-TaS2[J]. PHYSICAL REVIEW B,2022,105.
APA	Wu, Zongxiu.,Bu, Kunliang.,Zhang, Wenhao.,Fei, Ying.,Zheng, Yuan.,...&Yin, Yi.(2022).Effect of stacking order on the electronic state of 1T-TaS2.PHYSICAL REVIEW B,105.
MLA	Wu, Zongxiu,et al."Effect of stacking order on the electronic state of 1T-TaS2".PHYSICAL REVIEW B 105(2022).