| An in situ rewritable electrically-erasable photo-memory device for terahertz waves | |
| Luyao Xiong; Bin Liu; Dandan Liu; Longfeng Lv; Yanbing Hou; Jingling Shen; Bo Zhang | |
| 刊名 | NANOSCALE
 |
| 2020 | |
| 卷号 | 12期号:5页码:3343-3350 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30601]  |
| 专题 | 半导体研究所_纳米光电子实验室 |
| 推荐引用方式 GB/T 7714 | Luyao Xiong; Bin Liu; Dandan Liu; Longfeng Lv; Yanbing Hou; Jingling Shen; Bo Zhang. An in situ rewritable electrically-erasable photo-memory device for terahertz waves[J]. NANOSCALE,2020,12(5):3343-3350. |
| APA | Luyao Xiong; Bin Liu; Dandan Liu; Longfeng Lv; Yanbing Hou; Jingling Shen; Bo Zhang.(2020).An in situ rewritable electrically-erasable photo-memory device for terahertz waves.NANOSCALE,12(5),3343-3350. |
| MLA | Luyao Xiong; Bin Liu; Dandan Liu; Longfeng Lv; Yanbing Hou; Jingling Shen; Bo Zhang."An in situ rewritable electrically-erasable photo-memory device for terahertz waves".NANOSCALE 12.5(2020):3343-3350. |
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