Phase Change Behavior and Multi-Level Storage for V2O5 Thin Film in Phase-Change Memory Application

	Phase Change Behavior and Multi-Level Storage for V2O5 Thin Film in Phase-Change Memory Application
	Yongkang Xu; Yifeng Hu; Song Sun; Tianshu Lai
刊名	ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
	2020
卷号	9 期号:7 页码:073001
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30549]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yongkang Xu;Yifeng Hu;Song Sun; Tianshu Lai. Phase Change Behavior and Multi-Level Storage for V2O5 Thin Film in Phase-Change Memory Application[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2020,9(7):073001.
APA	Yongkang Xu;Yifeng Hu;Song Sun; Tianshu Lai.(2020).Phase Change Behavior and Multi-Level Storage for V2O5 Thin Film in Phase-Change Memory Application.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,9(7),073001.
MLA	Yongkang Xu;Yifeng Hu;Song Sun; Tianshu Lai."Phase Change Behavior and Multi-Level Storage for V2O5 Thin Film in Phase-Change Memory Application".ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 9.7(2020):073001.