Influence of dry etching on the properties of SiO2 and HfO2 single layers

doi:10.1364/AO.59.00A128

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Influence of dry etching on the properties of SiO2 and HfO2 single layers
	Xie, LY ; Liu, HS ; Zhao, J ; Jiao, HF ; Zhang, JL ; Wang, ZS ; Cheng, XB
刊名	APPLIED OPTICS
	2020
卷号	59 期号:5 页码:A128-A134
关键词	THIN-FILMS
ISSN号	1559-128X
DOI	10.1364/AO.59.00A128
文献子类	期刊论文
英文摘要	A comparative study was performed to investigate how etching methods and parameters affect the properties of SiO2 and HfO2 coatings. SiO2 and HfO2 single layers were prepared by electron-beam evaporation (EBE), ion-beam assisted deposition (IAD), and ion-beam sputtering (IBS). Then, ion-beam etching (IBE), reactive ion etching (RIE), and inductively coupled plasma etching (ICPE) were used to study the influence of ion bombardment energy and chemical reaction on the etching rates and properties of the prepared SiO2 and HfO2 single layers. For SiO2 coatings, chemical reaction plays a dominant role in determining the etching rates, so ICPE that has the strongest CHF3 plasma shows the highest etching rate. Moreover, all three etching methods have barely any influence on the properties of SiO2 coatings. For HfO2 coatings, the etching rates are more dependent on the ion bombardment energy, although the chemical reaction using CHF3 plasma also helps to increase the etching rates to some extent. To our surprise, the ion bombardment with energy as high as 900 V does not change the amorphous microstructure or crystalline states of prepared HfO2 coatings. However, the high-energy ion bombardment in IBE significantly increases the absorption of the HfO2 coatings prepared by all deposition techniques and decreases their laser damage resistance to different extents. (C) 2019 Optical Society of America
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/32937]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.MOE Key Lab Adv Microstruct Mat, Shanghai 200092, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China 3.Tongji Univ, Sch Phys Sci & Engn, Inst Precis Opt Engn, Shanghai 200092, Peoples R China 4.Tianjin Jinhang Inst Tech Phys, Tianjin Key Lab Opt Thin Film, Tianjin 300308, Peoples R China
推荐引用方式 GB/T 7714	Xie, LY,Liu, HS,Zhao, J,et al. Influence of dry etching on the properties of SiO2 and HfO2 single layers[J]. APPLIED OPTICS,2020,59(5):A128-A134.
APA	Xie, LY.,Liu, HS.,Zhao, J.,Jiao, HF.,Zhang, JL.,...&Cheng, XB.(2020).Influence of dry etching on the properties of SiO2 and HfO2 single layers.APPLIED OPTICS,59(5),A128-A134.
MLA	Xie, LY,et al."Influence of dry etching on the properties of SiO2 and HfO2 single layers".APPLIED OPTICS 59.5(2020):A128-A134.