Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography

doi:10.1107/S1600577520005494

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography
	Li, K ; Deng, B ; Zhang, HP ; Yu, FC ; Xue, YL ; Xie, CQ ; Ye, TC ; Xiao, TQ
刊名	JOURNAL OF SYNCHROTRON RADIATION
	2020
卷号	27 页码:1023-1032
关键词	SILICON VIAS RETRIEVAL PROFILE
ISSN号	0909-0495
DOI	10.1107/S1600577520005494
文献子类	期刊论文
英文摘要	Comprehensive evaluation of through-silicon via (TSV) reliability often requires deterministic and 3D descriptions of local morphological and statistical features of via formation with the Bosch process. Here, a highly sensitive phase-contrast X-ray microtomography approach is presented based on recorrection of abnormal projections, which provides comprehensive and quantitative characterization of TSV etching performance. The key idea is to replace the abnormal projections at specific angles in principles of linear interpolation of neighboring projections, and to distinguish the interface between silicon and air by using phase-retrieval algorithms. It is demonstrated that such a scheme achieves high accuracy in obtaining the etch profile based on the 3D microstructure of the vias, including diameter, bottom curvature radius, depth and sidewall angle. More importantly, the 3D profile error of the via sidewall and the consistency of parameters among all the vias are achieved and analyzed statistically. The datasets in the results and the 3D microstructure can be applied directly to a reference and model for further finite element analysis. This method is general and has potentially broad applications in 3D integrated circuits.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/32755]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai Synchrotron Radiat Facil, Zhangjiang Lab, Shanghai 201204, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
推荐引用方式 GB/T 7714	Li, K,Deng, B,Zhang, HP,et al. Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography[J]. JOURNAL OF SYNCHROTRON RADIATION,2020,27:1023-1032.
APA	Li, K.,Deng, B.,Zhang, HP.,Yu, FC.,Xue, YL.,...&Xiao, TQ.(2020).Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography.JOURNAL OF SYNCHROTRON RADIATION,27,1023-1032.
MLA	Li, K,et al."Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography".JOURNAL OF SYNCHROTRON RADIATION 27(2020):1023-1032.