808 nm broad-area laser diodes designed for high efficiency at high-temperature operation | |
Lan, Yu3,4; Yang, Guowen2,3,4; Liu, Yuxian3,4; Zhao, Yuliang3,4; Wang, Zhenfu4; Li, Te4; Demir, Abdullah1 | |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
2021-10 | |
卷号 | 36期号:10 |
关键词 | semiconductor laser laser diode high power high efficiency 808 nm |
ISSN号 | 0268-1242;1361-6641 |
DOI | 10.1088/1361-6641/ac2160 |
产权排序 | 1 |
英文摘要 | Semiconductor lasers with high power conversion efficiency (PCE) and output power are heavily investigated driven by more energy-efficient commercial applications. In this paper, an asymmetric broad area laser (A-BAL) design is studied and compared with a conventional symmetric broad area laser (S-BAL) design for 808 nm single emitter laser diodes. We present a comparative theoretical and experimental investigation by studying the thermal effects on the laser parameters. The output characteristics and efficiency loss paths for the designs were analyzed. The leakage of carriers was identified as the primary source of the PCE reduction with temperature. Suppressing this leakage by optimization of the A-BAL design, a record continuous-wave PCE of 68% at 25 degrees C and 60.4% at 75 degrees C were achieved for a single emitter laser with 10 W output power. These devices deliver high efficiency at high temperatures with reliable operation achieving 2000 h of an accelerated aging lifetime without failures. |
语种 | 英语 |
出版者 | IOP PUBLISHING LTD |
WOS记录号 | WOS:000697833600001 |
内容类型 | 期刊论文 |
源URL | [http://ir.opt.ac.cn/handle/181661/95073] |
专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
通讯作者 | Yang, Guowen; Demir, Abdullah |
作者单位 | 1.Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey 2.Dogain Laser Technol Suzhou Co Ltd, Suzhou 215123, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China |
推荐引用方式 GB/T 7714 | Lan, Yu,Yang, Guowen,Liu, Yuxian,et al. 808 nm broad-area laser diodes designed for high efficiency at high-temperature operation[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,36(10). |
APA | Lan, Yu.,Yang, Guowen.,Liu, Yuxian.,Zhao, Yuliang.,Wang, Zhenfu.,...&Demir, Abdullah.(2021).808 nm broad-area laser diodes designed for high efficiency at high-temperature operation.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,36(10). |
MLA | Lan, Yu,et al."808 nm broad-area laser diodes designed for high efficiency at high-temperature operation".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36.10(2021). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论