Solution-processable hierarchical-porous vanadium nitride films on silicon substrates for highly efficient symmetric supercapacitors

doi:10.1016/j.jpowsour.2021.230269

	Solution-processable hierarchical-porous vanadium nitride films on silicon substrates for highly efficient symmetric supercapacitors
	Wu, Z. Q.2,3; Yang, B. B.2,3; Li, H.2,3; Tong, H. Y.2,3; Wang, X.2,3; Li, C. D.2,3; Zhu, L. L.2; Wei, R. H.2,3; Hu, L.2; Liang, C. H.2
刊名	JOURNAL OF POWER SOURCES
	2021-09-30
卷号	507
关键词	Vanadium nitride Thin film Solution Porous Supercapacitor
ISSN号	0378-7753
DOI	10.1016/j.jpowsour.2021.230269
通讯作者	Yang, B. B.(yang00@mail.ustc.edu.cn) ; Liang, C. H.(chliang@issp.ac.cn) ; Zhu, X. B.(xbzhu@issp.ac.cn)
英文摘要	Vanadium nitride (VN) thin films with high specific capacitance are desirable in microsupercapacitors. Considering the integration with the silicon-based microelectronics, VN thin films on silicon wafers are needed. Here, hierarchical-porous VN thin films are deposited on silicon wafers through a solution-processable method. The prepared VN/silicon thin films show a high areal specific capacitance of similar to 60 mF cm(-2) at 5 mV s(-1) in 1 M KOH electrolyte. Symmetric devices deliver a high energy density of 21.2 and 12.8 mWh cm(-3) at a power density of 2.0 and 16.8 W cm(-3), respectively. Excellent retention 91.2% is achieved after 15,000 cycles. The results will provide a solution method for preparation of hierarchical-porous VN thin films on silicon wafers with excellent performance.
资助项目	National Key R&D Program of China[2016YFA0401801] ; National Key R&D Program of China[2014CB931704] ; Natural Science Foundation of Anhui Province[1608085QE107] ; Key Research Program of Frontier Sciences, CAS[QYZDBSSWSLH015] ; Youth Innovation Promotion Association of CAS[2014283]
WOS关键词	ELECTROCHEMICAL ENERGY-STORAGE ; THIN-FILMS ; ELECTRODE MATERIALS ; GRAPHENE ; NANOMATERIALS
WOS研究方向	Chemistry ; Electrochemistry ; Energy & Fuels ; Materials Science
语种	英语
出版者	ELSEVIER
WOS记录号	WOS:000684971700001
资助机构	National Key R&D Program of China ; Natural Science Foundation of Anhui Province ; Key Research Program of Frontier Sciences, CAS ; Youth Innovation Promotion Association of CAS
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/124371]
专题	中国科学院合肥物质科学研究院
通讯作者	Yang, B. B.; Liang, C. H.; Zhu, X. B.
作者单位	1.Chinese Acad Sci, High Magnet Field Lab, HFIPS, Hefei 230031, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China 3.Univ Sci & Technol China, Hefei 230026, Peoples R China 4.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
推荐引用方式 GB/T 7714	Wu, Z. Q.,Yang, B. B.,Li, H.,et al. Solution-processable hierarchical-porous vanadium nitride films on silicon substrates for highly efficient symmetric supercapacitors[J]. JOURNAL OF POWER SOURCES,2021,507.
APA	Wu, Z. Q..,Yang, B. B..,Li, H..,Tong, H. Y..,Wang, X..,...&Sun, Y. P..(2021).Solution-processable hierarchical-porous vanadium nitride films on silicon substrates for highly efficient symmetric supercapacitors.JOURNAL OF POWER SOURCES,507.
MLA	Wu, Z. Q.,et al."Solution-processable hierarchical-porous vanadium nitride films on silicon substrates for highly efficient symmetric supercapacitors".JOURNAL OF POWER SOURCES 507(2021).