Electrical and magnetic properties of epitaxial La1-xAgxMnO3 thin films prepared by a facile chemical solution deposition
Zhang, Li1; Kong, Xiaotian1; Li, Ping1; Yu, Jiangying1; Huang, Kai1; Zhu, Xuebin2
刊名JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
2021-08-07
ISSN号0957-4522
DOI10.1007/s10854-021-06722-8
通讯作者Zhang, Li(lizhang@ahjzu.edu.cn)
英文摘要A facile chemical solution deposition method was used to prepare La1-xAgxMnO3 thin films with 0.1 <= x <= 0.3 on LaAlO3 (001) single-crystal substrates. It was observed that the prepared thin films were grown epitaxially on the substrates with the epitaxial relationships of La1-xAgxMnO3(001) ||LaAlO3 (001) and La1-xAgxMnO3[110]||LaAlO3[110]. The lattice constant was decreased firstly and then saturated with doping. Both the ferromagnetic and semiconductor-metallic transition temperatures were firstly enhanced and then tended to saturate with Ag doping. The La0.85Ag0.15MnO3 showed the highest ferromagnetic transition temperature of 281 K and semiconductor-metallic transition temperature of 300 K. The results will provide a facile method to deposit epitaxial Ag-doped LaMnO3 thin films with potential room temperature applications.
资助项目Key Project of Support Plan for the Outstanding Youth of Anhui Provincial Colleges and Universities[gxyqZD2016144] ; Natural Science Foundation of Anhui Education Office[KJ2019A0779] ; National Natural Science Foundation of China[U1432137]
WOS关键词TRANSPORT-PROPERTIES ; MAGNETORESISTANCE ; SUBSTITUTION ; RESISTIVITY
WOS研究方向Engineering ; Materials Science ; Physics
语种英语
出版者SPRINGER
WOS记录号WOS:000682646800005
资助机构Key Project of Support Plan for the Outstanding Youth of Anhui Provincial Colleges and Universities ; Natural Science Foundation of Anhui Education Office ; National Natural Science Foundation of China
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/123099]  
专题中国科学院合肥物质科学研究院
通讯作者Zhang, Li
作者单位1.Anhui Jianzhu Univ, Sch Math & Phys, Key Lab Adv Elect Mat & Devices, Hefei 230601, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Li,Kong, Xiaotian,Li, Ping,et al. Electrical and magnetic properties of epitaxial La1-xAgxMnO3 thin films prepared by a facile chemical solution deposition[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2021.
APA Zhang, Li,Kong, Xiaotian,Li, Ping,Yu, Jiangying,Huang, Kai,&Zhu, Xuebin.(2021).Electrical and magnetic properties of epitaxial La1-xAgxMnO3 thin films prepared by a facile chemical solution deposition.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS.
MLA Zhang, Li,et al."Electrical and magnetic properties of epitaxial La1-xAgxMnO3 thin films prepared by a facile chemical solution deposition".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2021).
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