Influence of growth oxygen pressure on the electrical properties and phase transformation of the epitaxial (K,Na)NbO3-based lead-free ferroelectric films

doi:10.1063/5.0039320

	Influence of growth oxygen pressure on the electrical properties and phase transformation of the epitaxial (K,Na)NbO3-based lead-free ferroelectric films
	Chen, Xinyan 1,2; Jin, Feng 2; Li, Teng 3; Xu, Liqiang 3; Huang, Zhen 3; Wang, Ke 4; Chen, Feng 1
刊名	JOURNAL OF APPLIED PHYSICS
	2021-05-21
卷号	129
ISSN号	0021-8979
DOI	10.1063/5.0039320
通讯作者	Xu, Liqiang(xuliqiang@ahu.edu.cn) ; Chen, Feng(fchen@hmfl.ac.cn)
英文摘要	The influence of the growth oxygen pressure (GPO(2)) on the performance of the epitaxial 0.95(K0.49Na0.49Li0.02)(Ta0.2Nb0.8)O-3-0.05CaZrO(3) with 2 wt. % MnO2 addition (KNNLT-CZM) lead-free ferroelectric films grown on the La0.07Ba0.93SnO3-coated SrTiO3 (001) substrates is investigated. The x-ray diffraction results show that the tetragonality of the KNNLT-CZM films is dependent on GP(O2), which varies from 0.999 at 15 Pa to 1.006 at 35 Pa. Since the polarization direction with applied electrical field of the (010)-oriented KNN-based film is along [110]/[011], the relationship between the ferroelectricity and GP(O2) is well explained from the perspective of the tetragonality change. The leakage current density of the KNNLT-CZM films is suppressed and the dielectric constant is enhanced from 427 to 1538 at 1 kHz with increasing the GP(O2). Moreover, the orthorhombic to tetragonal phase transition temperature (TO-T) of the KNNLT-CZM films grown at 15 Pa is similar to 180 degrees C, which is much lower than similar to 210 degrees C of those grown at 25/35 Pa. GP(O2) is proven to be an important factor that regulating the ferroelectricity and TO-T of the epitaxial KNNLT-CZM films.
资助项目	National Key Research and Development Program of China[2017YFA0403502] ; National Key Research and Development Program of China[2017YFA0402903] ; National Natural Science Foundation of China[11804342] ; National Natural Science Foundation of China[12074001] ; State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University[KFZD202001]
WOS关键词	THIN-FILMS ; GIANT PIEZOELECTRICITY ; DIELECTRIC-PROPERTIES ; POLARIZATION ; TEMPERATURE
WOS研究方向	Physics
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000651189300017
资助机构	National Key Research and Development Program of China ; National Natural Science Foundation of China ; State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/122590]
专题	中国科学院合肥物质科学研究院
通讯作者	Xu, Liqiang; Chen, Feng
作者单位	1.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China 2.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China 3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China 4.Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
推荐引用方式 GB/T 7714	Chen, Xinyan,Jin, Feng,Li, Teng,et al. Influence of growth oxygen pressure on the electrical properties and phase transformation of the epitaxial (K,Na)NbO3-based lead-free ferroelectric films[J]. JOURNAL OF APPLIED PHYSICS,2021,129.
APA	Chen, Xinyan.,Jin, Feng.,Li, Teng.,Xu, Liqiang.,Huang, Zhen.,...&Chen, Feng.(2021).Influence of growth oxygen pressure on the electrical properties and phase transformation of the epitaxial (K,Na)NbO3-based lead-free ferroelectric films.JOURNAL OF APPLIED PHYSICS,129.
MLA	Chen, Xinyan,et al."Influence of growth oxygen pressure on the electrical properties and phase transformation of the epitaxial (K,Na)NbO3-based lead-free ferroelectric films".JOURNAL OF APPLIED PHYSICS 129(2021).