Highly efficient inverted perovskite solar cells incorporating P3CT-Rb as a hole transport layer to achieve a large open circuit voltage of 1.144 V

doi:10.1039/c9nr08441j

	Highly efficient inverted perovskite solar cells incorporating P3CT-Rb as a hole transport layer to achieve a large open circuit voltage of 1.144 V
	Li, Shufang 3; He, Bizu 3; Xu, Jing 3; Lu, Huiqiang 3; Jiang, Jian 3; Zhu, Jianhui 2; Kan, Zhipeng 1; Zhu, Linna 3; Wu, Fei 3
刊名	NANOSCALE
	2020-02-14
卷号	12 期号:6 页码:3686-3691
ISSN号	2040-3364
DOI	10.1039/c9nr08441j
通讯作者	Zhu, Linna(lnzhu@swu.edu.cn) ; Wu, Fei(feiwu610@swu.edu.cn)
英文摘要	Poly[3-(4-carboxybutyl)thiophene-2,5-diyl] (P3CT) has been noticed as a promising hole transport layer (HTL) for high-performance inverted planar perovskite solar cells (PSCs) due to its excellent stability and relatively high hole mobility. As we all know, the morphology of perovskite films is largely influenced by the substrate materials. Considering the affinity of alkali metal ions Rb+ and Cs+ with perovskite materials, inverted perovskite solar cells using alkali metal ion (Rb+, Cs+) doped P3CT (denoted as P3CT-Rb and P3CT-Cs) as the HTLs were investigated in this work. It turned out that the work function (WF) of P3CT-Rb matches well with the valence band of perovskites. The perovskite (MAPbI(3-x)Cl(x)) film deposited on top of the P3CT-Rb film exhibited a dense and uniform morphology with superior crystallinity and few pinholes. Consequently, a high efficiency of 20.52% was achieved for P3CT-Rb HTL-based devices, with an impressive open-circuit voltage (V-oc) of 1.144 V and a high fill factor (FF) of 82.78%.
资助项目	National Natural Science Foundation of China[51703183] ; National Natural Science Foundation of China[51802269] ; National Natural Science Foundation of China[11604267] ; Basic research and Frontier Exploration of Chongqing Municipal Science and Technology Commission[cstc2018jcyjAX0568] ; Fundamental Research Funds for the Central Universities[XDJK2019B065]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000515391000012
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/10510]
专题	中国科学院重庆绿色智能技术研究院
通讯作者	Zhu, Linna; Wu, Fei
作者单位	1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Organ Semicond Res Ctr, Chongqing, Peoples R China 2.Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China 3.Southwest Univ, Chongqing Key Lab Adv Mat & Technol Clean Energy, Sch Mat & Energy, Chongqing 400715, Peoples R China
推荐引用方式 GB/T 7714	Li, Shufang,He, Bizu,Xu, Jing,et al. Highly efficient inverted perovskite solar cells incorporating P3CT-Rb as a hole transport layer to achieve a large open circuit voltage of 1.144 V[J]. NANOSCALE,2020,12(6):3686-3691.
APA	Li, Shufang.,He, Bizu.,Xu, Jing.,Lu, Huiqiang.,Jiang, Jian.,...&Wu, Fei.(2020).Highly efficient inverted perovskite solar cells incorporating P3CT-Rb as a hole transport layer to achieve a large open circuit voltage of 1.144 V.NANOSCALE,12(6),3686-3691.
MLA	Li, Shufang,et al."Highly efficient inverted perovskite solar cells incorporating P3CT-Rb as a hole transport layer to achieve a large open circuit voltage of 1.144 V".NANOSCALE 12.6(2020):3686-3691.