Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

	Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate
	Li, Tianfeng ; Gao, Lizhen ; Lei, Wen ; Guo, Lijun ; Yang, Tao ; Chen, Yonghai ; Wang, Zhanguo
刊名	nanoscale research letters
	2013
卷号	8 页码:27
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-09-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24400]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Li, Tianfeng,Gao, Lizhen,Lei, Wen,et al. Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate[J]. nanoscale research letters,2013,8:27.
APA	Li, Tianfeng.,Gao, Lizhen.,Lei, Wen.,Guo, Lijun.,Yang, Tao.,...&Wang, Zhanguo.(2013).Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate.nanoscale research letters,8,27.
MLA	Li, Tianfeng,et al."Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate".nanoscale research letters 8(2013):27.