Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well

	Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well
	Jin, Dong-Dong ; Jiang, Chao ; Li, Guo-Dong ; Zhang, Liu-Wan ; Yang, Tao ; Liu, Xiang-Lin ; Yang, Shao-Yan ; Zhu, Qin-Sheng ; Wang, Zhan-Guo
刊名	journal of applied physics
	2013
卷号	113 期号:3 页码:033701
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-09-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24397]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jin, Dong-Dong,Jiang, Chao,Li, Guo-Dong,et al. Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well[J]. journal of applied physics,2013,113(3):033701.
APA	Jin, Dong-Dong.,Jiang, Chao.,Li, Guo-Dong.,Zhang, Liu-Wan.,Yang, Tao.,...&Wang, Zhan-Guo.(2013).Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well.journal of applied physics,113(3),033701.
MLA	Jin, Dong-Dong,et al."Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well".journal of applied physics 113.3(2013):033701.