Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films

doi:10.1021/acs.cgd.0c01418

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	Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films
	Han, Dan 1,2; Wang, Zhenhua 1,2; Gao, Xuan P. A.3; Zhang, Zhidong 1,2
刊名	CRYSTAL GROWTH & DESIGN
	2021-01-06
卷号	21 期号:1 页码:608-616
ISSN号	1528-7483
DOI	10.1021/acs.cgd.0c01418
通讯作者	Wang, Zhenhua(zhwang@imr.ac.cn)
英文摘要	The contribution of topological insulator surface states" their transport properties can be tuned by doping, but the uniformity effect of the dopants has been ignored in previous studies. In this work, we studied the influence of the degree of uniformity on high-quality Cu, Bi2Se3 films prepared by pulsed laser deposition with a designed sequential deposition process of Bi2Se3 and Cu. It was found that with a greater uniformity of the Cu dopants a two-dimensional electron electron interaction (2D EEI) effect becomes more evident below 25 similar to K in the presence of weak disorder and a weak antilocalization (WAL) effect near zero magnetic field becomes more pronounced at low temperature. Furthermore, the topological surface state conduction of the Cu Bi2Se3 films Nagaoka (HLN) model analysis of the WAL effect. This research may open up new aspect properties of disordered topological insulators. [Graphics]
资助项目	National Natural Science Foundation of China[51971220] ; National Natural Science Foundation of China[52031014] ; National Basic Research Program[2017YFA0206302] ; Foundation of National Laboratory for Materials Science[L2019R31] ; United Foundation of Liaoning Province ; National Laboratory for Materials Science[2019JH3] ; Liaoning Revitalization Talents Program[XLYC1807122]
WOS研究方向	Chemistry ; Crystallography ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000607623900062
资助机构	National Natural Science Foundation of China ; National Basic Research Program ; Foundation of National Laboratory for Materials Science ; United Foundation of Liaoning Province ; National Laboratory for Materials Science ; Liaoning Revitalization Talents Program
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/159129]
专题	金属研究所_中国科学院金属研究所
通讯作者	Wang, Zhenhua
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
推荐引用方式 GB/T 7714	Han, Dan,Wang, Zhenhua,Gao, Xuan P. A.,et al. Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films[J]. CRYSTAL GROWTH & DESIGN,2021,21(1):608-616.
APA	Han, Dan,Wang, Zhenhua,Gao, Xuan P. A.,&Zhang, Zhidong.(2021).Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films.CRYSTAL GROWTH & DESIGN,21(1),608-616.
MLA	Han, Dan,et al."Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films".CRYSTAL GROWTH & DESIGN 21.1(2021):608-616.