Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity

doi:10.1021/acs.nanolett.9b04210

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	Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity
	Yao, Tingting 2; Jiang, Yixiao 2; Chen, Chunlin 2; Yan, Xuexi 2; Tao, Ang 2; Yang, Lixin 2; Sugo, Kenyu 2,3; Ohta, Hiromichi 3; Ye, Hengqiang 2; Ikuhara, Yuichi 1,4,5
刊名	NANO LETTERS
	2020-02-01
卷号	20 期号:2 页码:1047-1053
关键词	Ferroelectric materials phase transformation one-dimensional conductivity transmission electron microscopy electron irradiation
ISSN号	1530-6984
DOI	10.1021/acs.nanolett.9b04210
通讯作者	Ma, Xiuliang(xlma@imr.ac.cn)
英文摘要	Ferroelectricity and electrical conductivity are two fundamentally incompatible properties that are difficult to simultaneously achieve in a material. Here, we combine these two contradictory properties by embedding conducting SrNbO3 micro/nanopillars into a ferroelectric SrNbO3.5 (i.e., Sr2Nb2O7) thin film. The high-T-c ferroelectric SrNbO3.5 thin film is epitaxially grown on a LaAlO3 substrate by pulsed laser deposition. The conducting SrNbO3 micro/nanopillars are introduced into the film via an electron-irradiation-induced SrNbO3.5-to-SrNbO3 phase transformation triggered by a focused electron beam. The sizes and distribution of the SrNbO3 micro/nanopillars can be accurately controlled through artificial manipulation of the electron-irradiation-induced SrNbO3.5-to-SrNbO3 phase transformation. The ferroelectric SrNbO3/SrNbO3.5 thin film with an in-plane polarization exhibits an electrical conductivity in the out-of-plane direction. Such conducting ferroelectric thin films may lead to the discovery of plentiful physical phenomena and have great potential for pyroelectric, photoelectric, and multiferroic applications.
资助项目	National Natural Science Foundation of China[51801215] ; National Natural Science Foundation of China[51771200] ; National Natural Science Foundation of China[51671194] ; Key Research Program of Frontier Sciences, CAS[QYZDY-SSW-JSC027] ; Key Research Program of Frontier Sciences, CAS[QYZDJ-SSW-JSC010] ; Thousand Youth Talents Plan of China, LiaoNing Revitalization Talents Program[XLYC1802088] ; Natural Science Foundation of LiaoNing Province[20180550885] ; MEXT[12024046] ; JSPS[17H06094] ; JSPS[17H01314] ; JSPS[19H05791]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000514255400030
资助机构	National Natural Science Foundation of China ; Key Research Program of Frontier Sciences, CAS ; Thousand Youth Talents Plan of China, LiaoNing Revitalization Talents Program ; Natural Science Foundation of LiaoNing Province ; MEXT ; JSPS
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/137927]
专题	金属研究所_中国科学院金属研究所
通讯作者	Ma, Xiuliang
作者单位	1.Japan Fine Ceram Ctr, Nanostruct Res Lab, Atsuta Ku, 2-4-1 Mutsuno, Nagoya, Aichi 4568587, Japan 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 3.Hokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan 4.Tohoku Univ, Adv Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan 5.Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, 2-11-16 Yayoi, Tokyo 1138656, Japan
推荐引用方式 GB/T 7714	Yao, Tingting,Jiang, Yixiao,Chen, Chunlin,et al. Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity[J]. NANO LETTERS,2020,20(2):1047-1053.
APA	Yao, Tingting.,Jiang, Yixiao.,Chen, Chunlin.,Yan, Xuexi.,Tao, Ang.,...&Ma, Xiuliang.(2020).Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity.NANO LETTERS,20(2),1047-1053.
MLA	Yao, Tingting,et al."Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity".NANO LETTERS 20.2(2020):1047-1053.