Microstructure and Electric Conductance of Mg-2(Sn, Si) Thin Films by Sputtering

doi:10.11900/0412.1961.2019.00115

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	Microstructure and Electric Conductance of Mg-2(Sn, Si) Thin Films by Sputtering
	Song Guihong 1; Li Guipeng 1; Liu Qiannan 1; Du Hao 2; Hu Fang 1
刊名	ACTA METALLURGICA SINICA
	2019-11-11
卷号	55 期号:11 页码:1469-1476
关键词	Mg-2(Sn, Si) film Mg content conductivity mobility XPS
ISSN号	0412-1961
DOI	10.11900/0412.1961.2019.00115
通讯作者	Song Guihong(songgh@sut.edu.cn) ; Du Hao(hdu@imr.ac.cn)
英文摘要	The Mg content in Mg-2(Sn, Si) films obtained by PVD method often deviates its stoichiometric composition due to the easy evaporation of Mg in low pressure. In order to control the Mg content in Mg-2(Sn, Si) lattice and achieve enhancements in thermoelectric efficiency, The Mg-Sn-Si-Bi thin films were deposited on single Si(111) substrate using a Mg-Sn-Si-Bi alloy target and a high pure Mg target by magnetron sputtering alternately. The results show that the Mg content greatly increases, while contents of both Sn and Si decrease in the films with the increasing sputtering time of the Mg target. The thin films possess single cubic Mg-2(Sn, Si) solution phase as the Mg content (atomic fraction) is in the range from 71.437% to 64.497%, the Mg-2(Sn, Si) solution phase disappear and both of Mg2Sn and Mg2Si phases occur as the Mg content decreases below 59.813% in the films. Furthermore, the Mg2Sn phase decomposes and metal Sn occurs as the Mg content in the films decreases to 54.006%. The metal Sn content increases and the Mg2Sn phase content decreases with the decreasing Mg content in the films, accompanying the near invariable Mg2Sn phase content. XPS spectrum data show that Mg exhibits the tendency to lose electrons. However, the Sn, Si and Bi exhibit the tendency to obtain electrons in deposited films. It is indicated that the Mg-Sn-Si-Bi thin film with single cubic solution phase possesses higher conductivity due to its higher carrier concentration and higher mobility. The mobility greatly decreases due to the occurrence of metal Sn in the films, thus the conductivity of the films greatly decreases.
资助项目	National Natural Science Foundation of China[51772193]
WOS研究方向	Metallurgy & Metallurgical Engineering
语种	英语
出版者	SCIENCE PRESS
WOS记录号	WOS:000492725000012
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/136967]
专题	金属研究所_中国科学院金属研究所
通讯作者	Song Guihong; Du Hao
作者单位	1.Shenyang Univ Technol, Sch Mat Sci & Technol, Shenyang 110870, Liaoning, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Song Guihong,Li Guipeng,Liu Qiannan,et al. Microstructure and Electric Conductance of Mg-2(Sn, Si) Thin Films by Sputtering[J]. ACTA METALLURGICA SINICA,2019,55(11):1469-1476.
APA	Song Guihong,Li Guipeng,Liu Qiannan,Du Hao,&Hu Fang.(2019).Microstructure and Electric Conductance of Mg-2(Sn, Si) Thin Films by Sputtering.ACTA METALLURGICA SINICA,55(11),1469-1476.
MLA	Song Guihong,et al."Microstructure and Electric Conductance of Mg-2(Sn, Si) Thin Films by Sputtering".ACTA METALLURGICA SINICA 55.11(2019):1469-1476.