Tailoring Nanoporous Structures in Bi2Te3 Thin Films for Improved Thermoelectric Performance

doi:10.1021/acsami.9b13920

CORC > 金属研究所 > 中国科学院金属研究所

	Tailoring Nanoporous Structures in Bi2Te3 Thin Films for Improved Thermoelectric Performance
	Qiao, Jixiang 1,2; Zhao, Yang 1,2; Jin, Qun 1,3; Tang, Jun 1; Kang, Siqing 1; Qiu, Jianhang 1; Tai, Kaiping 1
刊名	ACS APPLIED MATERIALS & INTERFACES
	2019-10-16
卷号	11 期号:41 页码:38075-38083
关键词	thin film thermoelectrics nanoporous structure pore interval Bi2Te3 phonon backscattering
ISSN号	1944-8244
DOI	10.1021/acsami.9b13920
通讯作者	Tai, Kaiping(kptai@imr.ac.cn)
英文摘要	Thin-film thermoelectrics (TEs) with unique advantages have triggered great interest in thermal management and energy harvesting technology for ambient temperature microscale systems. Although they have exhibited a good prospect, their unsatisfactory performances still seriously hamper their widespread application. Tailoring the porous structure has been demonstrated to be a facile strategy to significantly reduce thermal conductivity and enhance the figure of merit (ZT) of bulk TE materials; however, it is challenging for thin-film TEs. Here, the nanoporous Bi2Te3 thin films with faceted pore shapes and various porosities, pore sizes, and pore intervals are carefully designed and fabricated by evacuating the over-stoichiometry Te atoms. The dependence of the carrier mobility and lattice thermal conductivity on the pore characteristics is investigated. In the case of the pore interval longer than the electron mean free path, the porous structure greatly reduces the lattice thermal conductivity without affecting the electrical conductivity obviously. Phonon specular backscattering that is highly related to the pore characteristics is suggested to be mainly responsible for thermal conductivity reduction, resulting in similar to 60% enhancement in ZT at room temperature, that is, from similar to 0.42 for the dense film to similar to 0.67 for the nanoporous film. The enhanced ZT value is comparable to that of commercial bulk TEs and can be further improved by optimizing the carrier concentrations. This work provides a general approach to fabricate high-performance chalcogenide TE thin-film materials.
资助项目	Ministry of Science and Technology of China[2017YFA0700702] ; Ministry of Science and Technology of China[2017YFA0700705] ; National Natural Science Foundation of China[51571193] ; National Natural Science Foundation of China[51927803] ; National Natural Science Foundation of China[51402310] ; Hundred Talents Program of the Chinese Academy of Sciences ; Equipment Development Project of the Chinese Academy of Sciences ; Innovation Foundation of Institute of Metal Research
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000491219700075
资助机构	Ministry of Science and Technology of China ; National Natural Science Foundation of China ; Hundred Talents Program of the Chinese Academy of Sciences ; Equipment Development Project of the Chinese Academy of Sciences ; Innovation Foundation of Institute of Metal Research
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/136871]
专题	金属研究所_中国科学院金属研究所
通讯作者	Tai, Kaiping
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Dept Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China 3.Univ Chinese Acad Sci, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Qiao, Jixiang,Zhao, Yang,Jin, Qun,et al. Tailoring Nanoporous Structures in Bi2Te3 Thin Films for Improved Thermoelectric Performance[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(41):38075-38083.
APA	Qiao, Jixiang.,Zhao, Yang.,Jin, Qun.,Tang, Jun.,Kang, Siqing.,...&Tai, Kaiping.(2019).Tailoring Nanoporous Structures in Bi2Te3 Thin Films for Improved Thermoelectric Performance.ACS APPLIED MATERIALS & INTERFACES,11(41),38075-38083.
MLA	Qiao, Jixiang,et al."Tailoring Nanoporous Structures in Bi2Te3 Thin Films for Improved Thermoelectric Performance".ACS APPLIED MATERIALS & INTERFACES 11.41(2019):38075-38083.