A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices

doi:10.1021/acsnano.9b00330

CORC > 金属研究所 > 中国科学院金属研究所

	A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices
	Zhang, Dingdong 1,2; Du, Jinhong 1,2; Hong, Yi-Lun 1,2; Zhang, Weimin 1,2; Wang, Xiao 3; Jin, Hui 3; Burn, Paul L.3; Yu, Junsheng 4; Chen, Maolin 1,2; Sun, Dong-Min 1,2
刊名	ACS NANO
	2019-05-01
卷号	13 期号:5 页码:5513-5522
关键词	rosin graphene 2D materials clean transfer optoelectronic devices
ISSN号	1936-0851
DOI	10.1021/acsnano.9b00330
通讯作者	Ren, Wencai(wcren@imr.ac.cn)
英文摘要	Clean transfer of two-dimensional (2D) materials grown by chemical vapor deposition is critical for their application in electronics and optoelectronics. Although rosin can be used as a support layer for the clean transfer of graphene grown on Cu, it has not been usable for the transfer of 2D materials grown on noble metals or for large-area transfer. Here, we report a poly(methyl methacrylate) (PMMA)/rosin double support layer that enables facile ultraclean transfer of large-area 2D materials glown on different metals. The bottom rosin layer ensures clean transfer, whereas the top PMMA layer not only screens the rosin from the transfer conditions but also improves the strength of the transfer layer to make the transfer easier and more robust. We demonstrate the transfer of monolayer WSe, and WS2 single crystals grown on Au as well as large-area graphene films grown on Cu. As a result of the clean surface, the transferred WSe2 retains the intrinsic optical properties of the as-grown sample. Moreover, it does not require annealing to form good ohmic contacts with metal electrodes, enabling highperformance field effect transistors with mobility and ON/OFF ratio,--10 times higher than those made by PMMAtransferred WSe2. The ultraclean graphene film is found to be a good anode for flexible organic photovoltaic cells with a high power conversion efficiency of,-6.4% achieved.
资助项目	Ministry of Science and Technology of China[2016YFA0200101] ; National Science Foundation of China[51572265] ; National Science Foundation of China[51861135201] ; National Science Foundation of China[51325205] ; National Science Foundation of China[51290273] ; National Science Foundation of China[51521091] ; Chinese Academy of Sciences[KGZD-EW-303-1] ; Chinese Academy of Sciences[KGZD-EW-303-3] ; Postdoctoral Science Foundation of China[2018M630309] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Australian Research Council[FL160100067] ; Australian Government through the Australian Renewable Energy Agency (ARENA) Australian Centre for Advanced Photovoltaics
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000469886300057
资助机构	Ministry of Science and Technology of China ; National Science Foundation of China ; Chinese Academy of Sciences ; Postdoctoral Science Foundation of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; Australian Research Council ; Australian Government through the Australian Renewable Energy Agency (ARENA) Australian Centre for Advanced Photovoltaics
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/133852]
专题	金属研究所_中国科学院金属研究所
通讯作者	Ren, Wencai
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 3.Univ Queensland, Sch Chem & Mol Biosci, Ctr Organ Photon & Elect, Brisbane, Qld 4072, Australia 4.UESTC, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China 5.Chinese Acad Sci, Shenyang Inst Automat, 114 Nanta St, Shenyang 110016, Liaoning, Peoples R China 6.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Dingdong,Du, Jinhong,Hong, Yi-Lun,et al. A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices[J]. ACS NANO,2019,13(5):5513-5522.
APA	Zhang, Dingdong.,Du, Jinhong.,Hong, Yi-Lun.,Zhang, Weimin.,Wang, Xiao.,...&Ren, Wencai.(2019).A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices.ACS NANO,13(5),5513-5522.
MLA	Zhang, Dingdong,et al."A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices".ACS NANO 13.5(2019):5513-5522.