Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy

doi:10.1109/TED.2018.2847230

CORC > 金属研究所 > 中国科学院金属研究所

	Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy
	Ding, Li 1; Ukhtary, Muhammad Shoufie 2; Chubarov, Mikhail 3; Choudhury, Tanushree H.3; Zhang, Fu 4; Yang, Rui 5; Zhang, Ao 6; Fan, Jonathan A.5; Terrones, Mauricio 4,7,8; Redwing, Joan M.3,4
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2018-10-01
卷号	65 期号:10 页码:4059-4067
关键词	2-D material interference effect low-frequency (LF) vibration Raman enhancement
ISSN号	0018-9383
DOI	10.1109/TED.2018.2847230
通讯作者	Huang, Shengxi(sjh5899@psu.edu)
英文摘要	In 2-D van der Weals heterostructures, interactions between atomic layers dramatically change the vibrational properties of the hybrid system and demonstrate several interesting phenomena that are absent in individual materials. In this paper, we have investigated the vibrational properties of the heterostructure between transition metal dichalcogenide (TMD) and hexagonal boron nitride (hBN) on gold film at low- and high-frequency ranges by Raman spectroscopy. Nineteen Raman modes have been observed from the sample, including a new interlayer coupling mode at 28.8 cm(-1). Compared to reported experimental results of tungsten disulfide (WS2) on SiO2/Si substrates, the Raman spectrum for WS2 on hBN/Au emerges a blue shift of about 8 cm(-1). Furthermore, a remarkable enhancement of Raman intensity can be obtained when tuning hBN thickness in the heterostructure. Through systematic first-principles calculations, numerical simulations, and analytical calculations, we find that the 28.8 cm(-1) mode originates from the shearing motion between monolayer TMD and hBN layers. In addition, the gold substrate and hBN layers form an optical cavity and the cavity interference effects enhance the obtained Raman intensity. This paper demonstrates the novel vibrational modes of 2-D van der Weals heterostructure as an effective tool to characterize a variety of such heterostructures and reveals a new method to enhance the Raman response of 2-D materials.
资助项目	Electrical Engineering Department, The Pennsylvania State University ; JSPS KAKENHI[JP18J10199] ; JSPS KAKENHI[JP18H01810] ; Pennsylvania State University 2-D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under NSF[DMR-1539916] ; National Science Foundation through the I/UCRC Center for Atomically Thin Multifunctional Coatings (ATOMIC)[IIP-1540018] ; Air Force Office of Scientific Research Multidisciplinary University Research Initiative (MURI)[FA9550-161-0031] ; National Key Program of China[2017YFA0206301] ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC, China[U1537204] ; Materials Research Institute, The Pennsylvania State University ; CASC, China[U1537204]
WOS研究方向	Engineering ; Physics
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000445239700004
资助机构	Electrical Engineering Department, The Pennsylvania State University ; JSPS KAKENHI ; Pennsylvania State University 2-D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under NSF ; National Science Foundation through the I/UCRC Center for Atomically Thin Multifunctional Coatings (ATOMIC) ; Air Force Office of Scientific Research Multidisciplinary University Research Initiative (MURI) ; National Key Program of China ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC, China ; Materials Research Institute, The Pennsylvania State University ; CASC, China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/129495]
专题	金属研究所_中国科学院金属研究所
通讯作者	Huang, Shengxi
作者单位	1.Penn State Univ, Elect Engn Dept, University Pk, PA 16802 USA 2.Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan 3.Penn State Univ, Mat Res Inst, Crystal Consortium Mat Innovat Platform 2D, University Pk, PA 16802 USA 4.Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA 5.Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA 6.Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China 7.Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA 8.Penn State Univ, Dept Chem, University Pk, PA 16802 USA 9.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 10.MIT, Dept Nucl Sci & Engn, 77 Massachusetts Ave, Cambridge, MA 02139 USA
推荐引用方式 GB/T 7714	Ding, Li,Ukhtary, Muhammad Shoufie,Chubarov, Mikhail,et al. Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65(10):4059-4067.
APA	Ding, Li.,Ukhtary, Muhammad Shoufie.,Chubarov, Mikhail.,Choudhury, Tanushree H..,Zhang, Fu.,...&Huang, Shengxi.(2018).Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy.IEEE TRANSACTIONS ON ELECTRON DEVICES,65(10),4059-4067.
MLA	Ding, Li,et al."Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy".IEEE TRANSACTIONS ON ELECTRON DEVICES 65.10(2018):4059-4067.