Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters

doi:10.1016/j.jmst.2018.04.021

CORC > 金属研究所 > 中国科学院金属研究所

	Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters
	Jia, Xinyi 1,2; Huang, Nan 2; Guo, Yuning 3; Liu, Lusheng 2; Li, Peng 2; Zhai, Zhaofeng 1,2; Yang, Bing 2; Yuan, Ziyao 1,2; Shi, Dan 1,2; Jiang, Xin 2,3
刊名	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
	2018-12-01
卷号	34 期号:12 页码:2398-2406
关键词	Microwave plasma enhanced CVD Diamond films Morphological transformation Electron field emission
ISSN号	1005-0302
DOI	10.1016/j.jmst.2018.04.021
通讯作者	Jiang, Xin(xjiang@imr.ac.cn)
英文摘要	In this study, diamond films were synthesized on silicon substrates by microwave plasma enhanced chemical vapor deposition (CVD) over a wide range of experimental parameters. The effects of the microwave power, CH4/H-2 ratio and gas pressure on the morphology, growth rate, composition, and quality of diamond films were investigated by means of scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). A rise of microwave power can lead to an increasing pyrolysis of hydrogen and methane, so that the microcrystalline diamond film could be synthesized at low CH4/H-2 levels. Gas pressure has similar effect in changing the morphology of diamond films, and high gas pressure also results in dramatically increased grain size. However, diamond film is deteriorated at high CH4/H-2 ratio due to the abundant graphite content including in the films. Under an extreme condition of high microwave power of 10 kW and high CH4 concentration, a hybrid film composed of diamond/graphite was successfully formed in the absence of N-2 or Ar, which is different from other reports. This composite structure has an excellent measured sheet resistance of 10-100 Omega/Sqr. which allows it to be utilized as field electron emitter. The diamond/graphite hybrid nanostructure displays excellent electron field emission (EFE) properties with a low turn-on field of 2.17 V/mu m and beta = 3160, therefore it could be a promising alternative in field emission applications. (C) 2018 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
资助项目	National Natural Science Foundation of China[51202257] ; Shenyang Double-Hundreds Project[Z17-7-027] ; Shenyang Double-Hundreds Project[Z18-0-025]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	JOURNAL MATER SCI TECHNOL
WOS记录号	WOS:000443274500024
资助机构	National Natural Science Foundation of China ; Shenyang Double-Hundreds Project
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/129222]
专题	金属研究所_中国科学院金属研究所
通讯作者	Jiang, Xin
作者单位	1.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
推荐引用方式 GB/T 7714	Jia, Xinyi,Huang, Nan,Guo, Yuning,et al. Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2018,34(12):2398-2406.
APA	Jia, Xinyi.,Huang, Nan.,Guo, Yuning.,Liu, Lusheng.,Li, Peng.,...&Jiang, Xin.(2018).Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,34(12),2398-2406.
MLA	Jia, Xinyi,et al."Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 34.12(2018):2398-2406.