Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures

doi:10.1021/acsami.6b10992

CORC > 金属研究所 > 中国科学院金属研究所

	Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures
	Bai, Yu 1,2; Wang, Zhan Jie 1,2,3; Chen, Yan Na 1; Cui, Jian Zhong 3
刊名	ACS APPLIED MATERIALS & INTERFACES
	2016-12-07
卷号	8 期号:48 页码:32948-32955
关键词	ferroelectric heterostructures resistive switching behaviors ON/OFF ratio ferroelectric polarization interfacial built-in field
ISSN号	1944-8244
DOI	10.1021/acsami.6b10992
通讯作者	Wang, Zhan Jie(wangzj@imr.ac.cn)
英文摘要	In this work, epitaxial Pb(Zr0.4Ti0.6)O-3 (PZT) thin films with different thicknesses were deposited on Nb-doped SrTiO3 (NSTO) single-crystal substrates by chemical solution deposition (CSD), and their ferroelectric resistive switching behaviors were investigated. The results showed that the maximum ON/OFF ratio up to 850 could be obtained in the PZT/NSTO heterostructure with the 150 nm thick PZT film. On the basis of the Schottky-Simmons model and the modified semiconductor theory, we also evaluated the interfacial built-in field and the depletion layer at the PZT/NSTO interface, which can be modulated strongly by the ferroelectric polarization, but are independent of the thickness of the PZT thin films. It is clear that the ferroelectric resistive switching is related to the ferroelectric polarization and modulated by the thickness of ferroelectric films. Therefore, there is an optimal thickness of the PZT film for the maximum ON/OFF ratio due to the ferroelectricity and conductivity mutually restricting. It can be expected that by adjusting the ferroelectricity and conductivity of the ferroelectric thin film and its thickness, the maximum switching ratio can be further improved.
资助项目	Hundred Talents Program of Chinese Academy of Sciences ; National Natural Science of Foundation of China[51172238] ; National Natural Science of Foundation of China[51502303]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000389624600037
资助机构	Hundred Talents Program of Chinese Academy of Sciences ; National Natural Science of Foundation of China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/123411]
专题	金属研究所_中国科学院金属研究所
通讯作者	Wang, Zhan Jie
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Northeastern Univ, Minist Educ, Sch Mat Sci & Engn, Shenyang 110819, Peoples R China 3.Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110819, Peoples R China
推荐引用方式 GB/T 7714	Bai, Yu,Wang, Zhan Jie,Chen, Yan Na,et al. Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(48):32948-32955.
APA	Bai, Yu,Wang, Zhan Jie,Chen, Yan Na,&Cui, Jian Zhong.(2016).Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures.ACS APPLIED MATERIALS & INTERFACES,8(48),32948-32955.
MLA	Bai, Yu,et al."Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures".ACS APPLIED MATERIALS & INTERFACES 8.48(2016):32948-32955.