MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING

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	MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING
	Wang Bin 1,2; Xong Liangyin 1,2; Liu Shi 1,2
刊名	ACTA METALLURGICA SINICA
	2016-01-11
卷号	52 期号:1 页码:10-16
关键词	radio-frequency reactive sputtering thickness of film surface roughness secondary electron emission coefficient resistance to electron beam bombardment
ISSN号	0412-1961
通讯作者	Liu Shi(sliu@imr.ac.cn)
英文摘要	High, stable and durable secondary electron emission is an essential property for the application of dynodes of electron multipliers and photomultiplier tubes. The MgO film have been widely used as dynode materials for the applications owing to its good secondary electron emission properties. In this work, MgO and CoO doped MgO films, as secondary electron emission films, were prepared by radio-frequency reactive sputtering deposition on the stainless steel substrate, and also another MgO film at the surface of activated AgMg alloy was prepared. The effect of preparation processes on the secondary electron emission properties of the films was focused. It was found that the film thickness significantly affected the resistance to electron beam bombardment. With the increase of film thickness, the resistance to electron beam bombardment was significantly enhanced. Radio-frequency reactive sputtering deposition could control the film thickness by varying deposition time. The surface quality of MgO film is quite sensitive to the oxygen partial pressure of the deposition atmosphere. Higher oxygen partial pressure caused higher surface roughness, which was harmful to the secondary electron emission. After doping with CoO, the surface of MgO films were much flatter and smoother, resulting in the improvement of the secondary electron emission coefficient. The CoO doping also reduced of the sensitivity of film surface quality to the oxygen partial pressure. The secondary electron emission coefficient of CoO doped MgO film sharply decreased after heated at 550 degrees C for 1 h due to the surface quality degrading and the thermal decomposition induced loss of oxygen. Elevating the substrate temperature or oxygen partial pressure during deposition accounted for the presence of metallic Mg in film and the degrading of surface quality, which finally lead to lower secondary electron emission coefficient.
WOS研究方向	Metallurgy & Metallurgical Engineering
语种	英语
出版者	SCIENCE PRESS
WOS记录号	WOS:000369466200002
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/121575]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu Shi
作者单位	1.Chinese Acad Sci, Inst Met Res, Key Lab Nucl Mat & Safety Assessment, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Wang Bin,Xong Liangyin,Liu Shi. MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING[J]. ACTA METALLURGICA SINICA,2016,52(1):10-16.
APA	Wang Bin,Xong Liangyin,&Liu Shi.(2016).MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING.ACTA METALLURGICA SINICA,52(1),10-16.
MLA	Wang Bin,et al."MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING".ACTA METALLURGICA SINICA 52.1(2016):10-16.