Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters

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	Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters
	Liu, JP; Kong, MY; Si, JJ; Huang, DD; Li, JP; Sun, DZ
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	1998-12-07
卷号	31 期号:23 页码:L85-L87
ISSN号	0022-3727
通讯作者	Liu, JP()
英文摘要	Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters are studied. Four SiGe/Si single wells have been grown on Si(001) at 750 degrees C by disilane and solid Ge molecular beam epitaxy with varied disilane cracking-temperatures. Intense NP and TO-phonon replicas are detected up to 70 K in the photoluminescence spectra and the activation energy of the thermal quenching of the photoluminescence is 28 +/- 4 meV. The high growth temperature and purposeful introduction of fluctuation of structural parameters may be responsible for the improvement of the thermal quenching property.
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000077552800003
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/108286]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu, JP
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, JP,Kong, MY,Si, JJ,et al. Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,1998,31(23):L85-L87.
APA	Liu, JP,Kong, MY,Si, JJ,Huang, DD,Li, JP,&Sun, DZ.(1998).Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters.JOURNAL OF PHYSICS D-APPLIED PHYSICS,31(23),L85-L87.
MLA	Liu, JP,et al."Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters".JOURNAL OF PHYSICS D-APPLIED PHYSICS 31.23(1998):L85-L87.