High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films

doi:10.1109/LED.2011.2168597

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	High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films
	Zhang, Feng 1,2; Sun, Guosheng 1,2; Huang, Huolin 3; Wu, Zhengyun 3; Wang, Lei 2; Zhao, Wanshun 2; Liu, Xingfang 2; Yan, Guoguo 2; Zheng, Liu 2; Dong, Lin 2
刊名	IEEE ELECTRON DEVICE LETTERS
	2011-12-01
卷号	32 期号:12 页码:1722-1724
关键词	Metal-insulator-semiconductor (MIS) devices photodetectors ultraviolet (UV) detectors
ISSN号	0741-3106
DOI	10.1109/LED.2011.2168597
通讯作者	Zhang, Feng(fzhang@semi.ac.cn)
英文摘要	4H-SiC-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors with thermally grown SiO2 and evaporated Al2O3/SiO2 (A/S) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively. Ultralow dark currents of 3.25 x 10(-10) and 9.75 x 10(-9) A/cm(2) and high UV-to-visible rejection ratios of > 2 x 10(3) have been achieved at 10 V. The peak responsivities of these devices were separately 30 mA/W at 260 nm and 50 mA/W at 270 nm at 10 V. These results demonstrate that S/4H-SiC and A/S/4H-SiC MIS photodetectors are promising candidates to be applied in optoelectronic integrated circuits.
WOS研究方向	Engineering
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000297352500025
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/105423]
专题	金属研究所_中国科学院金属研究所
通讯作者	Zhang, Feng
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Feng,Sun, Guosheng,Huang, Huolin,et al. High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(12):1722-1724.
APA	Zhang, Feng.,Sun, Guosheng.,Huang, Huolin.,Wu, Zhengyun.,Wang, Lei.,...&Zeng, Yiping.(2011).High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films.IEEE ELECTRON DEVICE LETTERS,32(12),1722-1724.
MLA	Zhang, Feng,et al."High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films".IEEE ELECTRON DEVICE LETTERS 32.12(2011):1722-1724.