Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN

doi:10.1088/0256-307X/27/5/057104

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	Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN
	Hou Qi-Feng 1; Wang Xiao-Liang 1,2; Xiao Hong-Ling 1,2; Wang Cui-Mei 1,2; Yang Cui-Bai 1,2; Li Jin-Min 1
刊名	CHINESE PHYSICS LETTERS
	2010-05-01
卷号	27 期号:5 页码:4
ISSN号	0256-307X
DOI	10.1088/0256-307X/27/5/057104
通讯作者	Hou Qi-Feng(qfhou@semi.ac.cn)
英文摘要	The optical quenching of photoconductivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35 eV, 1.55 eV, 1.98 eV, and 2.60 eV are observed. It is found that the 1.98 eV quenching band is dominated in all the samples and the 2.60 eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60 eV are discussed. It is suggested that the defect level responsible for quenching at 2.60 eV plays an important role for the enhancement of resistivity.
资助项目	Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[IS-CAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Sciences Foundation of China[60890193] ; National Natural Sciences Foundation of China[60906006] ; National Basic Research Program of China[2006CB604905]
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000277344700058
资助机构	Chinese Academy of Sciences ; National Natural Sciences Foundation of China ; National Basic Research Program of China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/100633]
专题	金属研究所_中国科学院金属研究所
通讯作者	Hou Qi-Feng
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Hou Qi-Feng,Wang Xiao-Liang,Xiao Hong-Ling,et al. Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN[J]. CHINESE PHYSICS LETTERS,2010,27(5):4.
APA	Hou Qi-Feng,Wang Xiao-Liang,Xiao Hong-Ling,Wang Cui-Mei,Yang Cui-Bai,&Li Jin-Min.(2010).Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN.CHINESE PHYSICS LETTERS,27(5),4.
MLA	Hou Qi-Feng,et al."Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN".CHINESE PHYSICS LETTERS 27.5(2010):4.