Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection

doi:10.1016/j.jallcom.2020.156820

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	Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection
	Jing, Jiangping 1,4,5; Chen, Zhuoyuan 1,2,4,5; Feng, Chang 1,3,4,5; Sun, Mengmeng 1,4,5; Hou, Jian 2
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2021-01-15
卷号	851 页码:9
关键词	Graphitic carbon nitride Photoelectrochemical cathodic protection p/n type Doping Photocurrent direction
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2020.156820
通讯作者	Chen, Zhuoyuan(zychen@qdio.ac.cn)
英文摘要	Photoelectrochemical cathodic protection is emerging as a green and environmental method to protect metals against corrosion. Graphitic carbon nitride (g-C3N4) shows great application potential in this area because of its high efficiency, high stability and low cost. However, the pristine g-C3N4 shows amphoteric properties, resulting in its failure in providing photoelectrochemical cathodic protection for the coupled metal in NaCl solution. In this work, a K&I co-doping technique was performed to modulate the band structure of g-C3N4, and an n-type g-C3N4 (n-C3N4) was obtained. The changes in the molecular structure were studied by SEM, HRTEM, XRD, EDS, XPS and FT-IR technologies. The n-type semiconductor characteristics were verified by the photoinduced i-V curves, SKP potential distributions and pH drift techniques. The n-C3N4 can generate positive photocurrent in the whole investigated potential range, making it able to provide photoelectrochemical cathodic protection for the coupled 316L stainless steel in NaCl solution. This work is very helpful for promoting the application of g-C3N4 in the fields of the photoelectric conversion and the photoelectrochemical cathodic protection. (C) 2020 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[41906034] ; National Natural Science Foundation of China[41676069] ; National Natural Science Foundation of China[41976036] ; China Postdoctoral Science Foundation[2019M652278] ; Key Research and Development Program of Shandong Province[2019GHY112066] ; Key Research and Development Program of Shandong Province[2019GHY112085]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000579868900061
内容类型	期刊论文
源URL	[http://ir.qdio.ac.cn/handle/337002/168971]
专题	海洋研究所_海洋腐蚀与防护研究发展中心
通讯作者	Chen, Zhuoyuan
作者单位	1.Chinese Acad Sci, Ctr Ocean Megasci, 7 Nanhai Rd, Qingdao 266071, Peoples R China 2.Luoyang Ship Mat Res Inst LSMRI, State Key Lab Marine Corros & Protect, Wenhai Rd, Qingdao 266237, Peoples R China 3.Univ Chinese Acad Sci, 19 Jia Yuquan Rd, Beijing 100039, Peoples R China 4.Chinese Acad Sci, Inst Oceanol, Key Lab Marine Environm Corros & Biofouling, 7 Nanhai Rd, Qingdao 266071, Peoples R China 5.Pilot Natl Lab Marine Sci & Technol Qingdao, Open Studio Marine Corros & Protect, 1 Wenhai Rd, Qingdao 266237, Peoples R China
推荐引用方式 GB/T 7714	Jing, Jiangping,Chen, Zhuoyuan,Feng, Chang,et al. Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,851:9.
APA	Jing, Jiangping,Chen, Zhuoyuan,Feng, Chang,Sun, Mengmeng,&Hou, Jian.(2021).Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection.JOURNAL OF ALLOYS AND COMPOUNDS,851,9.
MLA	Jing, Jiangping,et al."Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection".JOURNAL OF ALLOYS AND COMPOUNDS 851(2021):9.