In Situ Formation of Hierarchical Bismuth Nanodots/Graphene Nanoarchitectures for Ultrahigh-Rate and Durable Potassium-Ion Storage

doi:10.1002/smll.201905789

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	In Situ Formation of Hierarchical Bismuth Nanodots/Graphene Nanoarchitectures for Ultrahigh-Rate and Durable Potassium-Ion Storage
	Zhao, YX ; Ren, XC ; Xing, ZJ ; Zhu, DM ; Tian, WF ; Guan, CR ; Yang, Y ; Qin, WM ; Wang, J ; Zhang, LL
刊名	SMALL
	2019
卷号	16 期号:2 页码:-
关键词	ANODE MATERIAL COMPOSITE ANODES CAPACITY NANOPARTICLES BATTERIES GRAPHITE GRAPHENE INTERCALATION CARBON RAMAN
ISSN号	1613-6810
DOI	10.1002/smll.201905789
文献子类	期刊论文
英文摘要	Metallic bismuth (Bi) has been widely explored as remarkable anode material in alkali-ion batteries due to its high gravimetric/volumetric capacity. However, the huge volume expansion up to approximate to 406% from Bi to full potassiation phase K3Bi, inducing the slow kinetics and poor cycling stability, hinders its implementation in potassium-ion batteries (PIBs). Here, facile strategy is developed to synthesize hierarchical bismuth nanodots/graphene (BiND/G) composites with ultrahigh-rate and durable potassium ion storage derived from an in situ spontaneous reduction of sodium bismuthate/graphene composites. The in situ formed ultrafine BiND (approximate to 3 nm) confined in graphene layers can not only effectively accommodate the volume change during the alloying/dealloying process but can also provide high-speed channels for ionic transport to the highly active BiND. The BiND/G electrode provides a superior rate capability of 200 mA h g(-1) at 10 A g(-1) and an impressive reversible capacity of 213 mA h g(-1) at 5 A g(-1) after 500 cycles with almost no capacity decay. An operando synchrotron radiation-based X-ray diffraction reveals distinctively sharp multiphase transitions, suggesting its underlying operation mechanisms and superiority in potassium ion storage application.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/32089]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China; 2.Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China; 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China; 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China; 5.Henan Univ Technol, Coll Sci, Zhengzhou 450001, Henan, Peoples R China
推荐引用方式 GB/T 7714	Zhao, YX,Ren, XC,Xing, ZJ,et al. In Situ Formation of Hierarchical Bismuth Nanodots/Graphene Nanoarchitectures for Ultrahigh-Rate and Durable Potassium-Ion Storage[J]. SMALL,2019,16(2):-.
APA	Zhao, YX.,Ren, XC.,Xing, ZJ.,Zhu, DM.,Tian, WF.,...&Tai, RZ.(2019).In Situ Formation of Hierarchical Bismuth Nanodots/Graphene Nanoarchitectures for Ultrahigh-Rate and Durable Potassium-Ion Storage.SMALL,16(2),-.
MLA	Zhao, YX,et al."In Situ Formation of Hierarchical Bismuth Nanodots/Graphene Nanoarchitectures for Ultrahigh-Rate and Durable Potassium-Ion Storage".SMALL 16.2(2019):-.