Gas flow simulation research on reaction chamber of reactive ion etching

doi:10.1117/12.2512222

CORC > 光电技术研究所 > 中国科学院光电技术研究所 > 薄膜光学相机总体室

	Gas flow simulation research on reaction chamber of reactive ion etching
	Zhang, Jingwen 1,2,3,4; Bin, Fan 2; Li, Zhiwei 2; Liu, Xin 2; Li, Bincheng 3; Yu, Han 2; Chang, Gong 1,2
	2019
会议日期	June 26, 2018 - June 29, 2018
会议地点	Chengdu, China
卷号	10841
DOI	10.1117/12.2512222
页码	108410G
英文摘要	Gas flow distribution of reaction chamber of reactive ion etching (RIE) etcher is usually considered to be a main factor in determining both the plasma distribution and etching uniformity. Based on the continuum fluid and heat transfer models of the commercial software, Fluent(Ansys), the gas flow distribution of the reaction chamber was simulated. And then the spatial distribution profiles of the pressures above the electrode surface under the different mass flow (50∼250sccm) inlet conditions, and the influence of the different GAP (L = 0.03∼0.06m) of the chambers on the gas flow uniformity were discussed. The result shows that the pressure distribution above the electrode has the character which the pressure is higher in the center of the electrode and lower at the edge and increases with the rise of the mass flow of inlet. And the uniformity of the gas flow distribution is enhanced with the rise of the GAP of the chamber. © 2019 SPIE.
会议录	Proceedings of SPIE 10841 - 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics
会议录出版者	SPIE
文献子类	会议论文
语种	英语
ISSN号	0277-786X
内容类型	会议论文
源URL	[http://ir.ioe.ac.cn/handle/181551/9619]
专题	薄膜光学相机总体室
作者单位	1.University of Chinese Academy of Sciences, Beijing; 100049, China; 2.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu; 610209, China; 3.School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu; 610054, China; 4.School of Energy and Power Engineering, Lanzhou University of Technology, Lan Zhou; 730050, China
推荐引用方式 GB/T 7714	Zhang, Jingwen,Bin, Fan,Li, Zhiwei,et al. Gas flow simulation research on reaction chamber of reactive ion etching[C]. 见:. Chengdu, China. June 26, 2018 - June 29, 2018.