Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects

doi:10.1088/1361-6463/abaf7b

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2020专题

	Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects
	Guo, Wei ; Xu, Houqiang ; Chen, Li ; Yu, Huabin ; Jiang, Jie'an ; Sheikhi, Moheb ; Li, Liang ; Dai, Yijun ; Cui, Mei ; Sun, Haiding
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2020
卷号	53 期号:48
关键词	INVERSION DOMAIN BOUNDARIES MOLECULAR-BEAM EPITAXY C-GAN DOMAINS GALLIUM NITRIDE N-POLARITY 2ND-HARMONIC GENERATION SURFACE-MORPHOLOGY GAAS FILMS GROWTH ALN
DOI	10.1088/1361-6463/abaf7b
英文摘要	Due to their non-centrosymmetric crystal orientation, wurtzite III-nitride crystals have two distinct orientations, i.e. III-polar and N-polar along thec-axis. Extensive effort has been devoted to polarity control and the characterization of III-nitride thin films. Both III-polar and N-polar films possess some unique features. By taking full advantage of both III and N-polar domains in a single structure, a lateral polarity structure (LPS), where III-polar and N-polar domains are grown side-by-side simultaneously on the wafer, has attracted great interest. In this review, recent progress in the design and fabrication of III-nitride LPS on various substrates is summarized. The structural, optical and electronic properties of III-nitride thin films incorporating LPS are discussed, with special attention paid to the interface between adjacent domains. Various techniques to qualitatively and quantitatively identify the polarity domains are provided, and their applications in optoelectronic and electronic devices including light-emitting-diodes, nonlinear frequency doubling waveguides, Schottky-barrier-diodes, etc, are intensively elaborated on. Finally, challenges related to the development of LPS-based devices and future perspectives are presented.
学科主题	Physics
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/20329]
专题	2020专题
作者单位	1.Ye, JC (corresponding author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China. 2.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Guo, Wei,Xu, Houqiang,Chen, Li,et al. Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2020,53(48).
APA	Guo, Wei.,Xu, Houqiang.,Chen, Li.,Yu, Huabin.,Jiang, Jie'an.,...&Ye, Jichun.(2020).Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects.JOURNAL OF PHYSICS D-APPLIED PHYSICS,53(48).
MLA	Guo, Wei,et al."Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects".JOURNAL OF PHYSICS D-APPLIED PHYSICS 53.48(2020).