A nondestructive raman spectra stress 2D analysis for the pressure sensor sensitive silicon membrane

doi:10.1016/j.engfailanal.2019.06.089

	A nondestructive raman spectra stress 2D analysis for the pressure sensor sensitive silicon membrane
	Wang, Zhenyu 2; Si, Bingjian 2; Chen, Su 2; Jiao, Binbin 1; Yan, Xiulan 3
刊名	ENGINEERING FAILURE ANALYSIS
	2019-11-01
卷号	105 页码:1252-1261
关键词	MEMS Residual stress Raman spectra Image mosaic
ISSN号	1350-6307
DOI	10.1016/j.engfailanal.2019.06.089
通讯作者	Jiao, Binbin(jiaobinb@ime.ac.cn) ; Yan, Xiulan(yanxl@igsnrr.ac.cn)
英文摘要	The residual stresses introduced by the bonding process has become a key effect for the MEMS product yield improvements. Many in-situ stress measurements have to destruct the devices. Raman spectroscopy is a nondestructive inelastic scattering measuring. Interpreting the silicon Raman frequency shifting can describe the stress location and intensity quantitatively in the lattice. The confocal microscopic observation can realize micrometer scale resolution. However, the limited visual field cannot provide the device stress distribution overview. In the meantime, the microscope loading platform displacement (only 100 mu m) will introduce severe random errors (4 +/- 1 mu m) in the overlapping movements. Since the local stress intensity could be converted into a RGB gray pixel. Through the image mosaic algorithms, the measured local residual stress distribution maps (750 mu m x 160 mu m) could be stitched to an enlarged stress distribution map (750 mu m x 340 mu m). This methodology could not only expand the stress inspection overview (60 +/- 2%), but also examine and eliminate the displacement random errors. The analysis results showed that the residual stresses were about 70 +/- 5% of the simulation value. The uniform difference between the measured and simulated values indicated a trustable stress analysis.
资助项目	Chinese Equipment Pre-research Field Foundation Key Project[61409230703] ; Chinese National Nature Science Foundation[41571309]
WOS关键词	TENSORIAL ANALYSIS ; SPECTROSCOPY
WOS研究方向	Engineering ; Materials Science
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000496188200094
资助机构	Chinese Equipment Pre-research Field Foundation Key Project ; Chinese National Nature Science Foundation
内容类型	期刊论文
源URL	[http://ir.igsnrr.ac.cn/handle/311030/131955]
专题	中国科学院地理科学与资源研究所
通讯作者	Jiao, Binbin; Yan, Xiulan
作者单位	1.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 2.Peking Univ, Sch Software & Microelect, Beijing 102600, Peoples R China 3.Chinese Acad Sci, Inst Geog Sci & Nat Resources Res, Key Lab Land Surface Pattern & Simulat, Beijing 100029, Peoples R China
推荐引用方式 GB/T 7714	Wang, Zhenyu,Si, Bingjian,Chen, Su,et al. A nondestructive raman spectra stress 2D analysis for the pressure sensor sensitive silicon membrane[J]. ENGINEERING FAILURE ANALYSIS,2019,105:1252-1261.
APA	Wang, Zhenyu,Si, Bingjian,Chen, Su,Jiao, Binbin,&Yan, Xiulan.(2019).A nondestructive raman spectra stress 2D analysis for the pressure sensor sensitive silicon membrane.ENGINEERING FAILURE ANALYSIS,105,1252-1261.
MLA	Wang, Zhenyu,et al."A nondestructive raman spectra stress 2D analysis for the pressure sensor sensitive silicon membrane".ENGINEERING FAILURE ANALYSIS 105(2019):1252-1261.