The analysis of electron scattering among multiplying layer in EBAPS using optimized Monte Carlo method | |
Bai, Jinzhou1,5,6; Bai, Yonglin6; Hou, Xun6; Cao, Weiwei2,3,5,6; Yang, Yang6; Wang, Bo6; Bai, Xiaohong6; Li, Siqi4,5 | |
刊名 | MODERN PHYSICS LETTERS B |
2020-12-10 | |
卷号 | 34期号:34 |
关键词 | EBAPS image sensor low light level single photon |
ISSN号 | 0217-9849;1793-6640 |
DOI | 10.1142/S0217984920503984 |
产权排序 | 1 |
英文摘要 | Electron bombarded Active Pixel Sensor (EBAPS) is well known for its low noise in low-light level imaging, high mechanical integration, and a relatively low cost. It plays an important role in areas of the industrial process as well as the fundamental scientific research. However, the performance of EBAPS is intensively influenced by the structural parameters (i.e. the acceleration voltage between cathode and anode, thickness of the passivation layer, etc.). Due to the influence of these factors mentioned above, the performance of EBAPS is restricted to achieve its best condition. Herein, a model based on the optimized Monte Carlo method was proposed for effectively analyzing the scattering behavior of electrons within the electron multiplier layer. Unlike traditional simulation, which only deals with the electron scattering in longitudinal, in this paper, we simulate the electron scattering character not only in horizontal but also vertical among the multiplier layer, which would react to the influence induced by structural parameters more complete and more precise. Based on the proposed model, an experimental prototype of EBAPS is built and its detection sensitivity achieves 0.84 x 10(-4) lux under spectral response of ultraviolet (UV) spectroscopy, which improved a lot from our former design. The proposed model can be used for analyzing the influence induced by structural parameters, which exhibit enormous potential for exploring the high-gain EBAPS. |
语种 | 英语 |
出版者 | WORLD SCIENTIFIC PUBL CO PTE LTD |
WOS记录号 | WOS:000599923700014 |
内容类型 | 期刊论文 |
源URL | [http://ir.opt.ac.cn/handle/181661/94212] |
专题 | 空间科学微光探测技术研究室 |
通讯作者 | Bai, Yonglin |
作者单位 | 1.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China 2.Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Xian 710049, Peoples R China 3.Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Peoples R China 4.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China 5.Univ Chinese Acad Sci UCAS, Beijing 100049, Peoples R China 6.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Peoples R China |
推荐引用方式 GB/T 7714 | Bai, Jinzhou,Bai, Yonglin,Hou, Xun,et al. The analysis of electron scattering among multiplying layer in EBAPS using optimized Monte Carlo method[J]. MODERN PHYSICS LETTERS B,2020,34(34). |
APA | Bai, Jinzhou.,Bai, Yonglin.,Hou, Xun.,Cao, Weiwei.,Yang, Yang.,...&Li, Siqi.(2020).The analysis of electron scattering among multiplying layer in EBAPS using optimized Monte Carlo method.MODERN PHYSICS LETTERS B,34(34). |
MLA | Bai, Jinzhou,et al."The analysis of electron scattering among multiplying layer in EBAPS using optimized Monte Carlo method".MODERN PHYSICS LETTERS B 34.34(2020). |
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