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	Semiconductor device incorporating a superlattice structure
	ANTHONY, WILLIAM, HIGGS; DAVID, GEOFFREY, HAYES; ROBERT, GORDON, DAVIS
	2000-03-29
著作权人	THE SECRETARY OF STATE FOR DEFENCE
专利号	GB2341974A
国家	英国
文献子类	发明申请
其他题名	Semiconductor device incorporating a superlattice structure
英文摘要	A semiconductor device, such as vertical-cavity surface emitting laser (VCSEL) or a superlattice-heterojunction bipolar transistor (SL-HBT) 10, incorporates a superlattice region 16 in series with the emitter 14 or another active region. The superlattice region 16 provides a non-linear response to a sufficiently high level of device current counteracting thermal runaway. This protects the device from damaging levels of current. The device 10 may be a radio-frequency SL-HBT with performance equivalent to that of a conventional heterojunction bipolar transistor. If there is a array of devices, e.g. a multi-finger bipolar transistor or an array of VCSELS, the invention prevents current-hogging by a single device. Application to FETs, HEMTs, PHEMTs, MESFETs, HFETs and diodes is also mentioned.
公开日期	2000-03-29
申请日期	1998-09-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/92726]
专题	半导体激光器专利数据库
作者单位	THE SECRETARY OF STATE FOR DEFENCE
推荐引用方式 GB/T 7714	ANTHONY, WILLIAM, HIGGS,DAVID, GEOFFREY, HAYES,ROBERT, GORDON, DAVIS. Semiconductor device incorporating a superlattice structure. GB2341974A. 2000-03-29.

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