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	Manufacture of semiconductor laser
	MUROTANI TOSHIO; OOMURA ETSUJI; ISHII JIYUN
	1981-03-10
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1981024995A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To contrive the improvements in quantum efficiency of the semiconductor laser and the lifetime thereof by melting back a mesa structure with In solution without large deformation immediately before growing P type InP by liquid phase epitaxially on the surface of a smeiconductor crystal having mesa structure and removing the impurity on the surface and deformed layer thereon. CONSTITUTION:An N type InGaAsP 2, P type InP 3 and InGaAsP 8 are laminated on one main surface of an N type InP substrate An SiO2 mask is coated thereon to form the mesa structure thereon, is contacted with In solution at 630 deg.C for approx. 1 sec. to melt back it. At this time Ga is dissolved in the In solution, and InP 3 is hardly etched not to deform the mesa structure. Then, an insulating layer 5 is coated thereon, and electrodes 6, 7 are attached thereto. Since the lateral enclosure layer of the active layer 3 is grown subsequently to the melt-back in this manner, there can be obtained a buried hetero structure having less defects to lower the oscillation threshold value and to increase the lifetime thereof in the laser.
公开日期	1981-03-10
申请日期	1979-08-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89882]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	MUROTANI TOSHIO,OOMURA ETSUJI,ISHII JIYUN. Manufacture of semiconductor laser. JP1981024995A. 1981-03-10.

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