QQ客服 官方微博 反馈留言

	Extraneous semiconductor joining matter and its preparation
	OGUCHI NOBUYUKI; MASUMOTO TAKESHI
	1980-03-29
著作权人	NAT RES INST METALS
专利号	JP1980044721A
国家	日本
文献子类	发明申请
其他题名	Extraneous semiconductor joining matter and its preparation
英文摘要	PURPOSE:To use this extraneous semiconductor joining matter as an element that forms an electromotive-force element and a semiconductor laser element, by constituting the joining matter by joining a specified, epitaxial, monocrystal plate onto a ferromagnetic semiconductor CdCr2Se4 monocrystal. CONSTITUTION:A 2% Ag added P-type CdCr2Se4 monocrystal beforehand prepared by means of a gaseous-phase growth method is mirror-surface ground in parallel with a surface 111, corroded for ten minutes in a solution manufactured by mixing HCl and 35wt% H2O2 at the rate of 10 to 1 in volume ratio, and washed by pure water, thus preparing a substrate with approximate 2X10cm surface area. The substrate is admitted into one end of a vessel in quartz with a 10mm inner diameter and 60mm length, 40mg of 5% Ag added P-type HgCr2Se4 powder is charged into the other end, and the vessel is sealed under approximate 10 Torr vacuum, thus preparing a manufacturing vessel. The vessel is maintained in an electric furnace with uniform temperature distribution for a fixed time, and a CdxHg1-xCr2Se4 layer (Where X=0<=X<1) is brought to an epitaxial condition that an azimuth is equal to the CdCr2Se4 monocrystal substrate, thus producing this excellent extraneous joining matter.
公开日期	1980-03-29
申请日期	1978-09-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89850]
专题	半导体激光器专利数据库
作者单位	NAT RES INST METALS
推荐引用方式 GB/T 7714	OGUCHI NOBUYUKI,MASUMOTO TAKESHI. Extraneous semiconductor joining matter and its preparation. JP1980044721A. 1980-03-29.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。