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	Method of and device for growing semiconductor compound
	JIYON HAIGU; MAAKU MARIAN FUAKUTAA; RODONII HORANZU MOSU
	1979-10-01
著作权人	POST OFFICE
专利号	JP1979126464A
国家	日本
文献子类	发明申请
其他题名	Method of and device for growing semiconductor compound
英文摘要	Semiconductor compounds which are alloys of group III-V compounds are grown by a liquid phase epitaxy method which includes heating growth apparatus in a reducing atmosphere while maintaining a solvent for the compound, a source of the group III-V compound and another element of the alloy separate from each other. After heating to reduce oxides, the element is added to the solvent, the source is brought into contact with the solvent and the resulting solution is brought into contact with a substrate to effect growth of the compound. Apparatus for carrying out the method is also described.
公开日期	1979-10-01
申请日期	1979-03-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89817]
专题	半导体激光器专利数据库
作者单位	POST OFFICE
推荐引用方式 GB/T 7714	JIYON HAIGU,MAAKU MARIAN FUAKUTAA,RODONII HORANZU MOSU. Method of and device for growing semiconductor compound. JP1979126464A. 1979-10-01.

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