| Method of selecting crystalline substance for compatible epitaxial growth and device for same substance | |
| PINGU KINGU TEIEN | |
| 1979-02-16 | |
| 著作权人 | WESTERN ELECTRIC CO |
| 专利号 | JP1979020664A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of selecting crystalline substance for compatible epitaxial growth and device for same substance |
| 英文摘要 | A device includes a layer (12) of one material epitaxially grown on another material (11). The materials have lattice constants which are in the ratio of an integer other than unity. For example one material (12) may be a semiconductor and the other a garnet (11). Thus magneto-optic (15) and electro-optic (13) devices can be combined on the same substrate to form integrated-optics devices. |
| 公开日期 | 1979-02-16 |
| 申请日期 | 1978-07-14 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89816]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WESTERN ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | PINGU KINGU TEIEN. Method of selecting crystalline substance for compatible epitaxial growth and device for same substance. JP1979020664A. 1979-02-16. |
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