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	Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask
	KITAMURA, SHOTARO C/O NEC CORPORATION
	1995-02-01
著作权人	NEC CORPORATION
专利号	EP0637111A1
国家	欧洲专利局
文献子类	发明申请
其他题名	Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask
英文摘要	A semiconductor mesa structure (55) including active, absorbing, or passive guide layer (54) is surrounded laterally by insulating mask (52), and is buried by a cladding layer (56) which extends over the insulating mask, and injected current flows through the cladding layer into the mesa structure without leakage from the cladding layer into a substrate so that the semiconductor optical device is improved in performance. In order to obtain a cladding layer having a flat top surface the mesa structure which is selectively grown on a (100)-substrate surface obliquely extends at least 5 degrees with respect to [011] direction C of the crystal structure.
公开日期	1995-02-01
申请日期	1994-07-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89753]
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	KITAMURA, SHOTARO C/O NEC CORPORATION. Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask. EP0637111A1. 1995-02-01.

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