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	Manufacture of semiconductor laser
	FUJIWARA MASATOSHI
	1990-04-26
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990114582A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To realize a narrow mesa by a method wherein a resist pattern used to form a mesa is removed after an insulating film has been formed. CONSTITUTION:Required crystal growth layers, i.e., an n-InP layer 2, a p-InP layer 3, an n-InP layer 4, a p-InP layer 5, an active layer 6, an n-InP layer 7 and an n-InGaAsP layer 8, are grown on a p-InP substrate 1; after that, the whole surface is coated with a resist 9; the resist 9 is patterned to be a required shape; a mesa etching operation is executed by making use of this resist pattern as a mask so that the active layer 6 is included at the inside of a mesa. Then, the resist pattern of the resist 9 which has been used as the mask is left as it is; an insulating film 10 is formed on the whole surface from its upper part. Then, the insulating film 10 at the upper part is removed together with the resist 9 which has been left at the upper part of the mesa; after that, an n- electrode 11 is formed on the side of the mesa part and a p-electrode 12 is formed on the side of the p-InP substrate Thereby, a narrow mesa can be realized.
公开日期	1990-04-26
申请日期	1988-10-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89649]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	FUJIWARA MASATOSHI. Manufacture of semiconductor laser. JP1990114582A. 1990-04-26.

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