QQ客服 官方微博 反馈留言

	Inner current constriction type semiconductor laser element
	MATSUBARA KUNIO
	1992-03-09
著作权人	FUJI ELECTRIC CO LTD
专利号	JP1992073986A
国家	日本
文献子类	发明申请
其他题名	Inner current constriction type semiconductor laser element
英文摘要	PURPOSE:To limit injection of a current to an end face of a stripelike third clad layer and to prevent deterioration of the end face by covering both longitu dinal end faces of the layer with high resistance layers each containing the same composition as that of the third clad layer but not doped. CONSTITUTION:After an Si02 film 9 is patterned in a stripe state on the entire upper surface of a laminate, a resist is removed, with the film 9 as a mask a contact layer 7 is first etched with sulfuric acid etchant, a third clad layer 6 and an etching stop layer 5 are then etched with iodine etchant to form a stripelike mesa, current constriction layers 8 are selectively grown at both sides of the mesa, and the film 9 is removed. Then, an SiO2 film is again formed on the entire upper surface, with the SiO2 film as a mask the part near the end face of the upper part from a second clad layer 4 is removed with sulfuric acid etchant, iodine etchant, and undoped AlGaAs layer 10 is selectively grown on the removed part. The composition of the grown layer is the same as those of the second, third clad layers.
公开日期	1992-03-09
申请日期	1990-07-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89409]
专题	半导体激光器专利数据库
作者单位	FUJI ELECTRIC CO LTD
推荐引用方式 GB/T 7714	MATSUBARA KUNIO. Inner current constriction type semiconductor laser element. JP1992073986A. 1992-03-09.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。