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	Semiconductor laser
	IWANO HIDEAKI
	1988-06-15
著作权人	SEIKO EPSON CORP
专利号	JP1988142878A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To control an oscillation only of a fundamental transverse mode, to reduce low threshold current density and to enable oscillation stably up to a high output by bringing width just above an active layer in a rib to 0.5-10.0mum and bringing the layer thickness of a clad just above the active layer left between the active layer and a II-VI semiconductor layer to 0-2.0mum. CONSTITUTION:A P-type AlGaAs clad layer 106 formed to an inverted mesa- shaped rib shape and a P-type GaAs contact layer 108 are formed, and both ends of a rib are buried with a II-VI compound semiconductor such as ZnSe 107. A P-type ohmic electrode 109 is shaped onto the ZnSe layer 107 on the P-type GaAs contact layer 108. When charges are injected to an active layer 105, light emission of carrier recombination is amplified between resonator end-surface, and laser beams are oscillated. The oscillation of a fundamental transverse mode is enabled only when the values of both layer thickness are brought to 0.5-10.0mum and 0-2.0mum respectively.
公开日期	1988-06-15
申请日期	1986-12-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89244]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	IWANO HIDEAKI. Semiconductor laser. JP1988142878A. 1988-06-15.

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