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	Semiconductor luminescent device
	TAKAGI NOBUYUKI
	1985-03-14
著作权人	FUJITSU KK
专利号	JP1985047488A
国家	日本
文献子类	发明申请
其他题名	Semiconductor luminescent device
英文摘要	PURPOSE:To enable to obtain a semiconductor laser element, whose threshold-value current is low and luminous efficiency is high, at a higher yield by a method wherein the optical waveguide region is made to coincide with the current region in a self- matching way. CONSTITUTION:A triangular diffusion source 9, whose one side face is facing a layer 8, is provided on the P type layer 8 and a substrate is constituted. A high- resistance first clad layer 2, an active layer 1 and an N type second clad layer 3 are successively laminated on the substrate. An electrode layer 12 is formed on the upper layer of the layer 3. In this semiconductor luminescent device, when impurities are diffused in the range indicated by dotted lines from the diffusion source 9, for example, conductivity is given to only the part of the layer 2, where is included in the range, and the other parts of the layer 2 remain to be high-resistance. Accordingly, in case bias voltage is impressed in the forward direction between the layer 8 and the layer 12, current flows to only the impurity diffusion region of the layer 2, particulary concentrates in the vicinity of the protruded tip part of the diffusion source 9 and only the part of the layer 1, where is opposed to the protruded tip part of the diffusion source 9, becomes a luminous region. That is, the optical waveguide region and the current region are made to mutually coincide in a self-matching way.
公开日期	1985-03-14
申请日期	1983-08-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89218]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	TAKAGI NOBUYUKI. Semiconductor luminescent device. JP1985047488A. 1985-03-14.

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